Nonthermal Plasma Synthesis of Silicon Nanocrystals

Mangolini, Lorenzo; Kortshagen, Uwe R.

doi:10.1002/9783527629954.ch13

Cited by 4 publications

(2 citation statements)

References 103 publications

(90 reference statements)

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“…When the precursor gas silane is added to the plasma it gets dissociated into radicals and ions. [ 20 ] The following particle generation in plasma is a multi‐setup process. [ 21 ] The first step is started off with the rapid formation of small nuclei from silane radicals and ions.…”

Section: Resultsmentioning

confidence: 99%

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Wolff,

Dworschak,

Benedikt

et al. 2023

Part & Part Syst Charact

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The HelixJet atmospheric plasma‐assisted synthesis can be a new toolbox to realize dedicated nanoparticle architectures such as Janus‐type morphologies. Silicon nanoparticles produced by the decomposition of Silane molecules are directed into an in‐flight annealing stage. The applied high‐temperature supplies a metal vapor rich atmosphere containing Manganese, Chromium, Iron, and Tin outgassing from the used steel tube. The metal atoms alloy into the Silicon nanoparticles and form a self‐assembled 'Si/MnxSiy‐alloy' Janus nanosphere architecture. The Janus particles nanochemistry is thoroughly examined in detail by the analytic capabilities of transmission electron microscopy. The combined approach of electron diffraction, EDS, and EELS identifies the Janus particle composition consisting of a pure Si hemisphere interfaced to an alloyed Mn4Si7 hemisphere covered by a thin (MnaFebCrc)Siy surface shell.

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Section: Resultsmentioning

confidence: 99%

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Wolff,

Dworschak,

Benedikt

et al. 2023

Part & Part Syst Charact

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“…It has been found that diamond NCs are most stable in a truncated octahedral structure, but Si and Ge NCs are stable in a nearly-spherical geometry [ 61 ]. In any case, free standing Si and Ge NCs are usually grown in conditions very far from equilibrium, justifying the use of spherical models [ 62 ]. Diamond nanocrystals, however, have been grown in different shapes and configurations, and their optical properties have been found to be in discrepancy with theoretical models, presumably due to the contribution of defects [ 63 ].…”

Section: Reviewmentioning

confidence: 99%

Silicon and germanium nanocrystals: properties and characterization

Capan¹,

Carvalho²,

Coutinho³

2014

Beilstein J. Nanotechnol.

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SummaryGroup-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials.

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Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals

Kůsová

Hapala

Valenta

et al. 2013

Adv Materials Inter

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Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect‐gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect‐gap nature. Here, we propose a solution to this long‐standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band‐structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole‐allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.

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Nonthermal Plasma Synthesis of Silicon Nanocrystals

Cited by 4 publications

References 103 publications

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Silicon and germanium nanocrystals: properties and characterization

Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals

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Nonthermal Plasma Synthesis of Silicon Nanocrystals

Cited by 4 publications

References 103 publications

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn4Si7‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn4Si7‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Silicon and germanium nanocrystals: properties and characterization

Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals

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Product

Resources

About

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source

Transmission Electron Microscopy Investigation of Self‐assembled 'Si/Mn₄Si₇‐Alloy' Janus Nanosphere Architectures Produced by a HelixJet Atmospheric Plasma Source