Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics

Zheng, Huifeng; Guo, Xiangyu; Pei, Dongfei; Li, W.; Blatz, Joshua M.; Hsu, Kaiwen; Benjamin, D. M.; Lin, Yu‐Min; Fung, H. S.; Chen, C.-C.; Nishi, Yoshio; Shohet, J. L.

doi:10.1063/1.4954176

Cited by 3 publications

(2 citation statements)

References 25 publications

(25 reference statements)

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“…76,77 Recently a room temperature curing with consequent treatment by UV (6.2 eV) and VUV (8.8 eV) photons has been proposed. 78 However, although substantial improvement of mechanical properties was demonstrated in the last work, the chemical composition of the cured low-k films was not analyzed.…”

Section: Ii2 Uv Curingmentioning

confidence: 99%

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Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: Ii2 Uv Curingmentioning

confidence: 99%

“…63 eV. 78 Porogen was removed during the first step while the second step provided the matrix crosslinkage. It was shown that this method allows improvement of dielectric properties.…”

Section: Ii24 Change Of Structure and Mechanical Properties Of Osg Films After Curingmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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Comprehensive enhancement in overall properties of MWCNTs-COOH/epoxy composites by microwave: An efficient approach to strengthen interfacial bonding via localized superheating effect

Liu

Luo

Fan

et al. 2019

Composites Part B: Engineering

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Effects of cesium ion implantation on the mechanical and electrical properties of porous SiCOH low-k dielectrics

Pei

Benjamin

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this work, the authors report an investigation of the effects of cesium (Cs) ion implantation on both porogen-embedded and ultraviolet (UV)-cured (porous) SiCOH films. For porogen-embedded SiCOH, it was found that Cs ion implantation can greatly improve the elastic modulus. It can also increase the time-zero dielectric breakdown (TZDB) strength. It also leads to an increase in the k-value for medium and high Cs doses, but for low Cs doses, the k-value decreased compared with its pristine counterpart. For UV-cured SiCOH, it was found that Cs-ion implantation does not improve the elastic modulus. It also leads to lower TZDB field strength and much higher k-values than its pristine counterpart. These effects can be understood by examining the changes in chemical bonds. This treatment is shown to have the potential to help solve the problem of the demand for lower k-values and the concomitant weak mechanical strength of SiCOH.

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Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics

Cited by 3 publications

References 25 publications

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Comprehensive enhancement in overall properties of MWCNTs-COOH/epoxy composites by microwave: An efficient approach to strengthen interfacial bonding via localized superheating effect

Effects of cesium ion implantation on the mechanical and electrical properties of porous SiCOH low-k dielectrics

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