Nonstoichiometry in Ion Implantation of Gallium Arsenide. Two Competing Mechanisms

Piskunov, D. I.; Danilov, Yu. A.; Maksimov, S. K.; Pitirimova, E. A.

doi:10.1002/pssa.2210960117

Cited by 3 publications

(2 citation statements)

References 26 publications

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“…In addition, the concentration of acceptors increases approximately proportional to the implantation dose. For the implanted dose of 2ϫ10 15 cm Ϫ2 , the acceptor concentration at the peak reached 2ϫ10 19 cm Ϫ3 , which is about 20 times higher than the maximum value normally obtained in GaAs implanted with C at RT. The corresponding R s and eff values are 150 ⍀/ᮀ and 80 cm 2 /V s, respectively.…”

Section: Fig 2 Curvementioning

confidence: 89%

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Electrical activation of carbon in GaAs: Implantation temperature effects

Данилов

Souza

Murel

et al. 2001

Applied Physics Letters

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Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1×1013 and 2×1015 cm−2 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 2×1019 cm−3. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant.

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Section: Fig 2 Curvementioning

confidence: 89%

“…Very likely, the neutral C atoms form precipitates in the GaAs matrix like those observed by electron microscopy analysis. 19 Curve ͑b͒ in Fig. 1 shows the dose dependence of the C electrical activation in samples implanted at 300°C after RTA at 850°C.…”

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confidence: 99%

Electrical activation of carbon in GaAs: Implantation temperature effects

Данилов

Souza

Murel

et al. 2001

Applied Physics Letters

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Radiation-induced defects in implanted Hg1–xCdxTe crystals

Lilenko

Shastov

Петров

et al. 1989

Phys. Stat. Sol. (a)

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Radiation‐induced defects are studied in Hg1–xCdxTe crystals due to implantation of H+ (200 and 500 keV) and Ar+ (50 and 150 keV) ions. The spatial distribution of the electron concentration n(x), associated with electrical active donor defects, and the radiation damage ND(x) in the crystalline structure of the semiconductor are obtained by electrical and RBS measurements, respectively. A comparison of the profiles n(x) and ND(x) is made. It is supposed that the main factors determining the spatial distribution n(x) are, firstly, diffusion of mercury atoms from the region of maximum defect creation near Rp into the bulk and towards the surface with the subsequent sputtering of the surface, and, secondly, the formation of extended defects in the course of ion implantation.

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