Nonprobe radio-frequency plasma diagnostics method based on the power balance in an asymmetric capacitively coupled discharge

Mateev, E.; Zhelyazkov, I.

doi:10.1063/1.372334

Cited by 10 publications

(9 citation statements)

References 15 publications

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“…The observed changes can be attributed to redistribution of rf power between the two main plasma regions in a capacitively coupled rf-driven discharge: the bulk plasma and the sheath. Studies of the power balance in an asymmetric rf discharge 23,24 have shown that the distribution depends criti-cally on the gases used, more specifically, on the losses of electron energy during lifetime of electrons in the bulk plasma. Two groups of gases may be distinguished.…”

Section: O 2 õN 2 õSf 6 Plasmasmentioning

confidence: 99%

Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Reyes-Betanzo

Moshkalyov

Swart

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Results of a comparative study of SiN x , SiO 2 and Si etching in high-and low-density O 2-N 2 based plasmas with small additions of SF 6 are presented. Higher selectivities of SiN x etching over both SiO 2 ͑up to 50-70͒ and Si ͑up to 20͒ are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low-and high-density plasma conditions. Possible ways of further optimization of the process are discussed.

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Section: O 2 õN 2 õSf 6 Plasmasmentioning

confidence: 99%

Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Reyes-Betanzo

Moshkalyov

Swart

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Nevertheless, several attempts have been made to model this kind of plasmas (most work has been done for less electronegative plasmas), at least in a limited parameter range [1]. Recently, a simple power balance model has been proposed by Mateev and Zhelyazkov [3], [4] and applied by Moshkalyov and coworkers in order to predict etching trends in different low and medium pressure (≤ 50 mTorr) plasmas [5]. However, the formalism of the model does not take into account the effect of negative ions, and it is less justified when the ion free fall model of the sheath can not be applied.…”

Section: Introductionmentioning

confidence: 99%

Study of Power Balance in Electronegative Capacitively Coupled Plasmas

Swart¹,

Verdonck²,

Moshkalev³

2020

JICS

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The balance of power model is a relatively simple model, which determines the power dissipated both in the plasma bulk and in the plasma sheath, as well as the ion flux and the average energy lost by an electron in the plasma bulk. It requires only the measurement of the total power and the self bias voltage. The original model does not take into account the effect of the plasma potential on the energy of incoming ions, because for most plasmas, the plasma potential is negligible compared with the self bias voltage. In this work, the plasma potential was taken into account. For pure SF6 plasmas, the modification had a significant effect on the ion flux, which increased by more than a factor 2, when compared with the original model. Besides, there are strong indications that the silicon etching with SF6 was mostly determined by the plasma bulk power, but the contribution from ion bombardment was considerable, too. For less electronegative plasmas, the influence of the plasma potential may be neglected.

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“…The second boundary condition states that the ions enter the collisionless sheath at Bohm's speed v B [4]. The power P which the source of high-frequency voltage introduces into the plasma can be split into two parts [1]:…”

Section: Analytical Description Of a Space-charge Sheathmentioning

confidence: 99%

“…Following the method described in [1], from at least three experimental points of the U 0 (P ) dependence we determine those coe±cients B, C and D which best¯t the function…”

Section: Analytical Description Of a Space-charge Sheathmentioning

confidence: 99%

“…They gain energy practically equal to the dc sheath potential and, hence, strike the electrode surface (wafer) at tens to hundreds of electronvolts. Recently, we [1] advanced a diagnostic method for determining the ion°ux ¡ i onto the powered electrode by using two measurable quantities (the self-bias voltage U 0 and the total rf power P absorbed by the discharge) in an asymmetric capacitively coupled ®-discharge. The physical ground of the method has been extended [2] to°-capacitive discharges taking into account the in°uence of the°-processes and the contribution of the active electron current to the discharge energetics.…”

Section: Introductionmentioning

confidence: 99%

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Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF3

Mateev

Zhelyazkov

2004

Open Physics

Self Cite

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Starting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf ) power of an asymmetric capacitively coupled discharge in NF 3 this paper studies the dependence of the ion ®ux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E ® , where E = ¡ rU (U being the self-bias potential), and ¬ is a coe¯cient depending on the gas pressure and cross section of elastic ion{neutral collisions. The model also considers the role of ® -electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion ®ux (at three di¬erent gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.

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Nonprobe radio-frequency plasma diagnostics method based on the power balance in an asymmetric capacitively coupled discharge

Cited by 10 publications

References 15 publications

Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Study of Power Balance in Electronegative Capacitively Coupled Plasmas

Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF3

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