2023
DOI: 10.1016/j.physb.2023.414799
|View full text |Cite
|
Sign up to set email alerts
|

Nonmagnetic Sn doping effect on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi2Te4

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
6
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(6 citation statements)
references
References 47 publications
0
6
0
Order By: Relevance
“…For the temperatures above 10 K, R xx increases with increasing temperature for MBT (Fig. 2(a)) indicating its metallic nature as observed in bulk [13,28] and flakes (∼100-200 nm thick) [13] of single crystalline MBT . At temperature ≲10 K, R xx shows upturn, which suggests its nonmetallic behaviour (see inset Fig.…”
Section: Methodsmentioning
confidence: 75%
See 1 more Smart Citation
“…For the temperatures above 10 K, R xx increases with increasing temperature for MBT (Fig. 2(a)) indicating its metallic nature as observed in bulk [13,28] and flakes (∼100-200 nm thick) [13] of single crystalline MBT . At temperature ≲10 K, R xx shows upturn, which suggests its nonmetallic behaviour (see inset Fig.…”
Section: Methodsmentioning
confidence: 75%
“…2(a)) in very lowtemperature regime. This behaviour could be attributed to the bulk carriers freezing and disorder induced electron-electron interaction [28][29][30]. Plausibly, the presence of disorder has also caused disappearance of spin fluctuation driven AFM transition peak in the R-T plot, similar to the thin film grown via co-sputtering technique [31].…”
Section: Methodsmentioning
confidence: 80%
“…Several studies [29][30][31][32][33] have demonstrated the synthesis of these crystals and confirmed the absence of additional substitution defects, as in the case of s substitution of Sb for Bi atoms.…”
Section: Introductionmentioning
confidence: 67%
“…However, there is another possibility of modulating the energy gap at the DP and reaching the TPT point through the partial replacement of Mn atoms with IV-group elements (Ge, Sn, Pb) [36][37][38][39][40][41][42] . In Refs [36][37][38] , it was shown that when Mn is replaced by Ge, Sn, or Pb atoms in the Mn 1−x A x Bi 2 Te 4 (A = Ge, Sn, Pb) compounds, the bulk band gap decreases with an increase in the concentration of the substituting atoms.…”
Section: Introductionmentioning
confidence: 99%