Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Solin, S. A.; Hines, D. R.; Rowe, A. C. H.; Tsai, Jaw-Shen; Pashkin, Yu. A.; Chung, S. J.; Goel, N.; Santos, M. B.

doi:10.1063/1.1481238

Cited by 135 publications

(70 citation statements)

References 11 publications

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“…It is worth to note that in the fourcontact device, the resistance R that accounts for Johnson noise is the so-called series resistance R series , which is measured at two voltage sensing probes of a device, 31,32 and is different from the resistance measured for the MR ratio calculations. For two-contact devices, i.e., the Corbino disk and the two-contact hybrid bar, the value of R series is the same as the one relevant for the MR measurements.…”

Section: Output Performances Of Different Geometries For Sensing Amentioning

confidence: 99%

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Sun

Soh

Kosel

2013

Journal of Applied Physics

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We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler's rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler's rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

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Section: Output Performances Of Different Geometries For Sensing Amentioning

confidence: 99%

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Sun

Soh

Kosel

2013

Journal of Applied Physics

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“…Where observed, these systems contain exclusively nonmagnetic materials in their construction therefore achieving a high signal-to-noise ratio. 3 Here, we present findings that have the potential to extend the EMR effect to a wider range of semiconducting materials via a huge geometrical enhancement. We also look at the link between the EMR effect and the large, linear, and unsaturating magnetoresistance discovered in the silver chalcogenides 4 with the use of a random branch and droplet model ͑RBDM͒.…”

mentioning

confidence: 99%

“…Future read heads based on the EMR effect have many potential advantages over existing devices based on giant magnetoresistance ͑GMR͒. 3 The EMR effect is particularly exciting with regards to its practical applications as significant values of magnetoresistance at room temperature and in low magnetic fields can be obtained. Where observed, these systems contain exclusively nonmagnetic materials in their construction therefore achieving a high signal-to-noise ratio.…”

mentioning

confidence: 99%

Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids

Hewett

Kusmartsev

2010

Phys. Rev. B

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Citation: HEWETT Extraordinary magnetoresistance ͑EMR͒ arises in hybrid systems consisting of semiconducting material with an embedded metallic inclusion. We have investigated such systems with the use of finite-element modeling, with our results showing good agreement to existing experimental data. We show that this effect can be dramatically enhanced by over four orders of magnitude as a result of altering the geometry of the conducting region. The significance of this result lies in its potential application to EMR magnetic field sensors utilizing more familiar semiconducting materials with nonoptimum material parameters, such as silicon. Our model has been extended further with a geometry based on the microstructure of the silver chalcogenides, consisting of a randomly sized and positioned metallic network with interspersed droplets. This model has shown a large and quasilinear magnetoresistance analogous to experimental findings.

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“…There is currently great interest in materials with enhanced electronic properties at room temperature (RT) due to their importance for applications, such as low-power, high-speed logic devices, 1-3 magnetic storage 4,5 and magnetic detection. 6 The technological demands for device miniaturization and nanoscale dimensions in such applications have been well enumerated.…”

Section: Introductionmentioning

confidence: 99%

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

et al. 2011

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InSb/Al x In 1-x Sb heterostructures display intrinsic parallel conduction in the buffer layer at room temperature that limits exploitation of the high-mobility two-dimensional electron gas (2DEG), particularly for nanostructured devices where deep isolation etch processing is impractical. Here, we demonstrate a strategy to reduce the parasitic conduction by the insertion of a pseudomorphic barrier layer of wide-band-gap alloy below the QW. We have studied the high-field magnetotransport in two types of InSb/Al x In 1-x Sb modulation doped quantum well heterostructures with and without the barrier layer in the temperature range 2-290 K and magnetic fields to 7.5 T. The conduction in the doping layer, the 2DEG, and the buffer layer are analyzed using a multi-carrier model that successfully captures the field dependence of the Hall resistance over the experimental field range. Samples with the barrier layer show significantly reduced buffer layer conduction compared to samples without. Our results are expected to be of importance for ambient temperature nano-electronic operation.

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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Cited by 135 publications

References 11 publications

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

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