Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs

Takagaki, Y.; Gamo, Kenji; Namba, Susumu; Ishida, Shuichi; Takaoka, S.; Murase, K.; Ishibashi, Koji; Aoyagi, Yoshinobu

doi:10.1016/0038-1098(88)90820-4

Cited by 149 publications

(39 citation statements)

References 10 publications

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“…This potential arm is negatively charged. Consequently, a negative potential difference is detected for N, or vice versa for R, as previously pointed out [1,2,9], if the intersection resistance is sufficiently small. The remaining electrons collide with the surface of the current arm and the intersection, or they deflect to the crossing arms.…”

Section: Methodsmentioning

confidence: 51%

“…Most experimental investigations have been made on a system of the order of submicrons on semiconductors, such as a modulation-doped GaAs±AlGaAs heterostructure. Takagaki et al [1,2] observed a negative resistance in a narrow multibranched electron waveguide fabricated from a GaAs±AlGaAs wafer. They attributed this phenomenon to ballistic electron transmission.…”

Section: Introductionmentioning

confidence: 99%

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Ballistic Electron Transport Characteristics in High-Purity Aluminum Single Crystals

Ueda

Hashimoto

Kino

1998

phys. stat. sol. (a)

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Negative bend resistance was observed at 4.2 K in cross‐shaped specimens cut from a high‐purity aluminum single crystal with a residual resistance ratio RRR of about 100000. The cross section of arms of the specimens was 0.5×0.4 mm2 and the bulk mean free path lb of conduction electrons in the material was about 3 mm. The negative bend resistance was enhanced in a magnetic field parallel to a pair of arms. Nonlinear I–V characteristics were observed when one of the potential probes was placed on an arm at a distance less than lb from the center of the intersection of the arms. Besides, the I–V characteristics depended strongly on the volume of a reservoir for incident electrons, left behind the potential probe. The negative bend resistance and the nonlinear I–V characteristics were attributed to the ballistic conduction of electrons. The orientation dependence of the ballistic conduction was also examined.

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Section: Methodsmentioning

confidence: 51%

Section: Introductionmentioning

confidence: 99%

Ballistic Electron Transport Characteristics in High-Purity Aluminum Single Crystals

Ueda

Hashimoto

Kino

1998

phys. stat. sol. (a)

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“…This is a natural assumption in the absence of magnetic fields and spin-orbit interactions (Recall that we are considering a spinless LL). Since our main interest is to discuss the effects originated in the strength of the couplings, later, in Sections III and IV, as a simplifying hypothesis, we will consider the same coupling for both probes (w 1 = w 2 ), although it is known that an asymmetrical coupling (w 1 = w 2 ) is sufficient to produce a negative resistance 14,20 .…”

Section: A Modelmentioning

confidence: 99%

Electron-spin motion: a new tool to study ferromagnetic films and surfaces

Dey

Weber²

2011

J. Phys.: Condens. Matter

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We analyze the behavior of the four-terminal resistance, relative to the two-terminal resistance of an interacting quantum wire with an impurity, taking into account the invasiveness of the voltage probes. We consider a one-dimensional Luttinger model of spinless fermions for the wire. We treat the coupling to the voltage probes perturbatively, within the framework of non-equilibrium Green function techniques. Our investigation unveils the combined effect of impurities, electron-electron interactions and invasiveness of the probes on the possible occurrence of negative resistance.

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“…l,w < λ 0 ) has been widely studied at low temperatures and using the Landauer-Büttiker (L-B) formalism 5 a good understanding of the phenomena is established. 6,7 In particular, a variety of distinct departures from classical behaviour appear in the low field magnetotransport of simple cross junctions, such as a negative resistance in zero magnetic field referred to as "bend resistance", 8,9 and a quenched or negative Hall resistance at low fields. 10 The above mentioned anomalies, at least when the number of transverse modes, N, is much larger than one (N >>1), can be adequately described by combining the L-B formalism and a classical approach, whereby electrons are treated as classical particles which, in analogy to ray optics, reflect from the boundaries with predicable trajectories.…”

Section: Introductionmentioning

confidence: 99%

Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices

et al. 2011

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We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1−xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

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Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs

Cited by 149 publications

References 10 publications

Ballistic Electron Transport Characteristics in High-Purity Aluminum Single Crystals

Ballistic Electron Transport Characteristics in High-Purity Aluminum Single Crystals

Electron-spin motion: a new tool to study ferromagnetic films and surfaces

Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices

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