2006
DOI: 10.1002/chin.200628217
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Nonlocal Magnetization Dynamics in Ferromagnetic Heterostructures

Abstract: Two complementary effects modify the GHz magnetization dynamics of nanoscale heterostructures of ferromagnetic and normal materials relative to those of the isolated magnetic constituents. On the one hand, a time-dependent ferromagnetic magnetization pumps a spin angular-momentum flow into adjacent materials and, on the other hand, spin angular momentum is transferred between ferromagnets by an applied bias, causing mutual torques on the magnetizations. These phenomena are manifestly nonlocal: they are governe… Show more

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Cited by 49 publications
(91 citation statements)
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References 113 publications
(267 reference statements)
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“…We note that our data demonstrate an ultrafast transfer of angular momentum of longitudinal spin through a spin current on subpicosecond timescales. In contrast, previous works demonstrated spin-transfer torque, that is, a transfer of transverse angular momentum between noncollinear spins and a magnetic moment at microwave frequencies [30][31][32][33] , leading to important innovations such as spin-torque magnetic random access memory (RAM) for data storage, spin-torque oscillators for frequency-agile telecommunications, and spin-wave interconnects for spin-based logic. Similarly, we anticipate that superdiffusive spin transfer, which has a considerably larger magnetic moment, can find applications in moving domain walls, switching magnetic nano-elements on subpicosecond timescales or in spin-based electronics operating in the Terahertz frequency range.…”
Section: Discussionmentioning
confidence: 96%
“…We note that our data demonstrate an ultrafast transfer of angular momentum of longitudinal spin through a spin current on subpicosecond timescales. In contrast, previous works demonstrated spin-transfer torque, that is, a transfer of transverse angular momentum between noncollinear spins and a magnetic moment at microwave frequencies [30][31][32][33] , leading to important innovations such as spin-torque magnetic random access memory (RAM) for data storage, spin-torque oscillators for frequency-agile telecommunications, and spin-wave interconnects for spin-based logic. Similarly, we anticipate that superdiffusive spin transfer, which has a considerably larger magnetic moment, can find applications in moving domain walls, switching magnetic nano-elements on subpicosecond timescales or in spin-based electronics operating in the Terahertz frequency range.…”
Section: Discussionmentioning
confidence: 96%
“…Bismuth-substituted iron garnet films (Gd 1 O 12 , 50 μm in thickness), grown by a liquid-phase epitaxy method on the (110) plane of (CaGd) 3 (MgGaZr) 5 O 12 (SGGG) substrates (350 μm in thickness), were used in the experiment. Although as-grown films have out-ofplane easy axis due to the growth-induced anisotropy, we prepared annealed films (6 h at 1,200°C in air), where the anisotropy is reduced and easily movable magnetic bubbles can be formed.…”
Section: Methodsmentioning
confidence: 99%
“…Therefore, the practical manipulation of the magnetic domain wall (DW) is now being realized by spin transfer torque generated from spin-polarized charge current in metals (3) and from flow of magnons in insulators (4), e.g., via the spin Seebeck effect (5,6). On the other hand, the optical control, aiming at ultrafast, nonthermal, and remote access to magnetic domains, remains elusive even after the discoveries of photomagnetic domain manipulation (7,8), laser-induced magnetization reversal (9), and directional generation of magnetostatic waves (10).…”
mentioning
confidence: 99%
“…An alternative method, better suited to antiferromagnetic materials, is based on the absorption of a spin current created by spin pumping from a neighboring ferromagnet. This method has attracted considerable attention owing to its versatility (Tserkovnyak et al, 2005;Ando, 2014). The technique is applicable no matter the magnetic order (ferromagnetism, ferrimagnetism, or antiferromagnetism) and the electrical state (metal, insulator, or semiconductor) of the spin sink.…”
Section: Af Materials Spin Penetration Depth (Nm)mentioning
confidence: 99%