Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface

Abstract

It has been established that the probability of Cs induced chemisorption of molecular oxygen on a p GaAs(Cs) surface is mainly determined by the probability of the dissociation of the molecule during its col lision with the surface. With an increase in the amount of adsorbed oxygen on the p GaAs(Cs, O) surface, the probability of its chemisorption decreases and, depending on the value of the cesium coating, can either be still determined by the probability of the dissociation of the molecule or be limited by the probability of the "capture" of oxygen atoms by the local chemisorption centers or depend on these two processes.