Nonlinear transport phenomena in a two-subband system

Wiedmann, Steffen; Gusev, G. M.; Raichev, O. É.; Bakarov, A. K.; Portal, J. C.

doi:10.1103/physrevb.84.165303

Cited by 25 publications

(33 citation statements)

References 39 publications

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“…Therefore, the analysis of the HIRO amplitude using Eq. (1) can yield information on both sharp and smooth disorder components in a 2DES under study.In the regime of weak electric fields, the differential resistance acquires a negative quantum correction which scales with j 2 , as has been observed in GaAs heterostructures [3,4,6,8,[13][14][15][16][17][18][19]. In contrast to Eq.…”

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confidence: 65%

“…In contrast, the second (inelastic) term in Eq. (3), given by τ in /τ ∼ E F /τ (k B T ) 2 (E F is the Fermi energy, τ in is the inelastic relaxation time), can be significantly larger than unity, especially in high density and low mobility 2DESs [8,[13][14][15][16][17][18][19]. In such systems, nonlinear transport at small j offers a convenient way to obtain τ in and thus access the strength of electron-electron interactions in the 2DES under study.…”

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confidence: 99%

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Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

et al. 2017

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We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates.Nonlinear magnetotransport in high Landau levels of twodimensional electron systems (2DESs) offers a unique approach to obtain information on both electron-impurity and electron-electron scattering. For example, at high direct currents the differential resistance exhibits Hall field-induced resistance oscillations (HIRO) [1][2][3][4][5][6][7][8][9][10][11] which originate from electron (or hole [10]) backscattering off impurities leading to transitions between Landau levels. Since such transitions are accompanied by a displacement of the electron guiding center by a cyclotron diameter 2R c , applied current density j translates to an energy scale eρ H j(2R c ), where ρ H is the Hall resistivity. HIRO then result from the commensurability between this energy and the inter-Landau level spacing ω c , where ω c is the cyclotron frequency of a charge carrier. In overlapping Landau levels, the corresponding correction to the differential resistance r is given by [12] where ǫ j = eρ H j(2R c )/ ω c , R 0 is the low-temperature, linear-response resistance at zero magnetic field (B = 0), τ is the disorder-limited transport scattering time, τ π is the backscattering time, λ = exp(−π/ω c τ q ) is the Dingle factor, and τ q is the quantum lifetime. The disorder in a 2DES can often be conveniently separated into a short-range (e.g., background impurities) and a longrange (e.g., remote ionized donors) component, characterized by "sharp" and "smooth" scattering rates (τ −1 sh and τ −1 sm ), respectively. When τ ≫ τ q , as in a conventional high-mobility modulation-doped 2DES, τ sh ≈ τ π and τ sm ≈ τ q . Therefore, the analysis of the HIRO amplitude using Eq. (1) can yield information on both sharp and smooth disorder components in a 2DES under study.In the regime of weak electric fields, the differential resistance acquires a negative quantum correction which scales with j 2 , as has been observed in GaAs heterostructures [3,4,6,8,[13][14][15][16][17][18][19]. In contrast to Eq. (1), this current-induced correction originates both from the low ǫ j counterpart of Eq. (1) [12] (displacement mechanism) and from the oscillatory modification of the energy distribution function (inelastic mechanism) [20]. More specifically, in overlapping Landau levels, δr can be written as [12] whereHere, τ −1 ⋆ entering the first (displacement) term can be expressed as τ −1, where τ −1 n represents n-th angular harmonic of the rate of scattering on angle θ, τ −1. This displacement term can never exceed 9/16 (sharp-disorder limit). In contra...

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Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

et al. 2017

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“…At small magnetic fields we observed resistance oscillations with a period proportional to the magnetic field. We found that these oscillations are related to the current induced LandauZener transitions between Landau levels [12,17,19]. At higher magnetic fields another type of the resistance oscillations emerges with a period that is independent of the magnetic field.…”

Section: Introductionmentioning

confidence: 78%

Intersubband resistance oscillations in crossed electric and magnetic fields

et al. 2012

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Quantum oscillations of nonlinear resistance are investigated in response to electric current and magnetic field applied perpendicular to single GaAs quantum wells with two populated subbands. At small magnetic fields current-induced oscillations appear as Landau-Zener transitions between Landau levels inside the lowest subband. Period of these oscillations is proportional to the magnetic field. At high magnetic fields different kind of quantum oscillations emerges with a period,which is independent of the magnetic field. At a fixed current the oscillations are periodic in inverse magnetic field with a period that is independent of the dc bias. The proposed model considers these oscillations as a result of spatial variations of the energy separation between two subbands induced by the electric current.

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“…As discussed numerous times [35][36][37][38][39][40][41][42][43][44][45][46], the observation of electron backscattering relies on the uniformity of the electric field within the bulk of the sample. Resonant mixing of MIRO and magneto-inter-subband resistance oscillations [47][48][49][50] further proves that MIRO is a bulk phenomenon. It is obvious that Refs.…”

Section: Eq (4)mentioning

confidence: 92%

Comment on “Theory of microwave-induced zero-resistance states in two-dimensional electron systems” and on “Microwave-induced zero-resistance states and second-harmonic generation in an ultraclean two-dimensional electron gas”

Zudov

2015

Phys. Rev. B

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Nonlinear transport phenomena in a two-subband system

Cited by 25 publications

References 39 publications

Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

Intersubband resistance oscillations in crossed electric and magnetic fields

Comment on “Theory of microwave-induced zero-resistance states in two-dimensional electron systems” and on “Microwave-induced zero-resistance states and second-harmonic generation in an ultraclean two-dimensional electron gas”

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