Nonlinear saturable properties of indium selenide film fabricated by molecular beam epitaxy method in near infrared region and Q-switched laser performance for Nd:GdYNbO laser

The photocarrier recombination in van der Waals layers may determine the device performance based on these materials. Here, we investigated the photocarrier dynamics in a multilayer indium selenide nanofilm using transient absorption spectroscopy. The sub-bandgap transient absorption feature was attributed to the indirect intraband absorption of the photocarriers, which was then exploited as a probe to monitor the photocarrier dynamics. With increasing pump intensities, the photocarrier decay was accelerated because of the rising contribution from a bimolecular recombination channel that was then assigned to the exciton-exciton annihilation. The rate constant of the exciton-exciton annihilation was given as (1.8 0.1) 10-15 cm2 ps-1 from a global fitting of the photocarrier decay kinetics for different pump intensities. Our finding suggests that, in contrast with their monolayer counterpart, the exciton-exciton annihilation is actually quite inefficient in multilayers due to the weaker Coulomb interaction. Hence, compared with the monolayers, the lifetime of photocarriers in multilayers would not be significantly reduced under high-intensity pump condition, and the apparent photocarrier lifetime could be further improved just by suppressing the monomolecular recombination channels such as trapping.

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Nonlinear saturable properties of indium selenide film fabricated by molecular beam epitaxy method in near infrared region and Q-switched laser performance for Nd:GdYNbO laser

Cited by 2 publications

References 38 publications

Ferroelectricity and nanotube-induced synthesis of one-dimensional group-Ⅳ monochalcogenide nanowires

Ferroelectricity and nanotube-induced synthesis of one-dimensional group-Ⅳ monochalcogenide nanowires

Exciton–exciton annihilation in thin indium selenide layers

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