Nonlinear response behavior of Fe/Bi2Te2.7Se0.3 artificially tilted multilayer thermoelectric devices to thermal contact

Abstract

The response behavior of artificially tilted multilayer thermoelectric devices (ATMTDs) to thermal radiation has been intensely investigated for remote thermal detection; however, their response behavior to thermal contact is still not well understood. In this letter, Fe/Bi2Te2.7Se0.3 ATMTDs have been fabricated by alternately stacking metallic Fe layers and Bi2Te2.7Se0.3 layers to reveal the response behavior to thermal contact. It was found that the transverse thermoelectric voltages (ΔVx) of the ATMTDs once contacting heat source were rapidly raised in the first seconds and then nonlinearly attenuated after reaching maximum ΔVx. A one-dimensional unsteady heat transfer model was proposed to reveal the attenuation process, which obeys an exponential variation and strongly depends on the heat source temperature. Using the ATMTDs as temperature sensors, the detection uncertainty can be less than 1 K. This work has demonstrated great potential application of the ATMTDs in the field of contact-type temperature detection.

Spark Plasma Sintered Bulk Nanocomposites of Bi2Te2.7Se0.3 Nanoplates Incorporated Ni Nanoparticles with Enhanced Thermoelectric Performance

“…With the increasing global energy crisis, more attention is being paid to thermoelectric conversion materials for direct conversion between heat and electricity. − Bismuth telluride is a traditional thermoelectric material with excellent thermoelectric properties near room temperature. − The performance of thermoelectric materials is defined by the dimensionless figure of merit ZT = ( S 2 T σ/ Κ) , , where S is the Seebeck coefficient, σ is electrical conductivity, and Κ is thermal conductivity. High-performance thermoelectric materials require low Κ , high S , and elevated σ. , However, single modulation of one parameter cannot effectively improve the thermoelectric performance because all three parameters are coupled together. , In past decades, several means have been developed to decouple the three parameters and optimize the thermoelectric performance of materials. Among these, bottom-up or top-down nanostructuring is an effective route to increase ZT values of thermoelectric materials through reduction in thermal conductivity without detriment in electric transport. − For instance, Cao et al prepared bismuth telluride-based thermoelectric material by hydrothermal method combined with hot pressing technology with superior ZT value of 1.47 at 420 K .…”

High Transverse Thermoelectric Performance and Interfacial Stability of Co/Bi0.5Sb1.5Te3 Artificially Tilted Multilayer Thermoelectric Devices

“…The thermal response curves of Co/BST ATMTDs in Figure b–d are compared with previous results . Weights of different masses were used as cold sources in this work.…”

“…The thermal response curves of Co/BST ATMTDs in Figure 6b−d are compared with previous results. 36 Weights of different masses were used as cold sources in this work. The difference between the hot-end temperature and room temperature was about 80 K. As the mass increases, the response voltage increases because the larger mass of the weight absorbs the heat transferred by the hot end to establish a larger temperature difference between the hot end and the cold end.…”

“…This is because when using the weight to test, the actual temperature difference between opposite sides of the device is less than 80 K. The response time of the three devices is about 3 s, which is less than that of Fe/Bi 2 Te 2.7 Se 0.3 ATMTD. 36 Furthermore, Co/ BST ATMTDs have a stronger response voltage, which highlights their potential for applications as temperature sensors.…”