Nonlinear optics and dynamics in passive semiconductors

Klingshirn, C.

doi:10.1007/bfb0108295

Cited by 11 publications

(2 citation statements)

References 59 publications

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“…The energy positions of the emission peaks demonstrate that the actual lattice temperature in the excited NWs is significantly higher than the cryostat temperature of T cryo = 77 K. A comparison with material gain calculations (see Supplementary Fig. S18 ) suggests a temperature of ~ 160 K inside the excited NWs considering both a temperature dependent 14 , and a carrier density dependent bandgap shrinkage 50 , 51 . A similar lattice temperature is observed in the photoluminescence spectra of NWs on glass and Au film and Au-coated NWs at moderate excitation power below lasing threshold (see Supplementary Fig.…”

Section: Resultsmentioning

confidence: 89%

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

Aman

Mohammadi

Fränzl

et al. 2021

Sci Rep

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Optically pumped lasing from highly Zn-doped GaAs nanowires lying on an Au film substrate and from Au-coated nanowires has been demonstrated up to room temperature. The conically shaped GaAs nanowires were first coated with a 5 nm thick Al2O3 shell to suppress atmospheric oxidation and band-bending effects. Doping with a high Zn concentration increases both the radiative efficiency and the material gain and leads to lasing up to room temperature. A detailed analysis of the observed lasing behavior, using finite-difference time domain simulations, reveals that the lasing occurs from low loss hybrid modes with predominately photonic character combined with electric field enhancement effects. Achieving low loss lasing from NWs on an Au film and from Au coated nanowires opens new prospects for on-chip integration of nanolasers with new functionalities including electro-optical modulation, conductive shielding, and polarization control.

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Section: Resultsmentioning

confidence: 89%

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

Aman

Mohammadi

Fränzl

et al. 2021

Sci Rep

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“…It is worthwhile to remark that the use of the term "nonlinearity" is not uniform. In some cases the variation of the absorption coefficient by the temperature rise due to an existing absorption process is included [4]. In so far we use this sort of nonlinearity to realize the control function of our filter.…”

Section: Introductionmentioning

confidence: 99%

External Stabilization of CO2-Laser Radiation by Means of i-Semiconductor Absorption

Keßler

Köppen

Krause

1990

phys. stat. sol. (a)

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The stabilization of C0,-laser radiation (or other high power radiation in the spectral region of about 5 to 50 pm wavelength) can be realized by the free carrier absorption of intrinsic semiconductors. This effect is due to the increasing free carrier concentration with increasing temperature. In this way the free carrier absorption reduces the transmitted radiation-flux density if the input power of radiation rises and therefore we have a corresponding increasing temperature. This "stabilization filter" works without any outer control mechanism as a passive optical device. The paper states the theoretical background of the control characteristic as well as the experimental parameters for the realized example. At a laser power of about 7 W the output power is typically 1.2 W with a stabilization factor of 1 : 30 and a time constant of about 1.0 s. Semiconductors as i-germanium and i-InSb, respectively, are used as filter materials.Die Stabilisierung von C0,-Laserstrahlung (oder anderer entsprechend intensiver Strahlung im Spektralbereich von etwa 5 bis 50 pm Wellenlange) kann erreicht werden durch Ausnutzung der Absorption freier Ladungstrager von eigenleitenden Halbleitern. Dies gelingt aufgrund der mit der Temperatur ansteigenden Tragerkonzentration. Auf diese Weise reduziert die Absorption der freien Ladungstrager die transmittierte StrahIungsfluBdichte, wenn die einfallende Strahlungsleistung und damit die Temperatur ansteigt. Dieses ,,Stabilisierungsfilter" arbeitet ohne jeden auaeren Regelmechanismus als passives optisches Bauelement. Die Arbeit stellt den theoretischen Hintergrund der Regelcharakteristik dar und gibt die experimentellen Parameter eines realisierten Beispiels an. Bei einer Laserleistung von etwa 7 W betrug die Ausgangsleistung typisch 1,2 W bei einem Stabilisierungsfaktor von 1 : 30 und einer Zeitkonstanten von etwa 1,0 s. Als Halbleiter fanden sowohl i-Germanium als auch i-InSb Verwendung.') Pockelsstr. 4, W-3300 Braunschweig, FRG. ' ) The first publication of the results was an oral presentation at DPG Spring-Meeting, Miinster [9].

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The Electron-Hole Plasma

Semiconductor Optics

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Nonlinear optics and dynamics in passive semiconductors

Cited by 11 publications

References 59 publications

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

External Stabilization of CO2-Laser Radiation by Means of i-Semiconductor Absorption

The Electron-Hole Plasma

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