Nonlinear Optical Susceptibilities in Group-IV and III-V Semiconductors

Jha, Sudhanshu S.; Bloembergen, N.

doi:10.1103/physrev.171.891

Cited by 204 publications

(45 citation statements)

References 21 publications

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“…The result shows that -(ET) 2 I 3 has a very large ð2Þ ; the intensity of one of the components is over 40 times larger than that of BBO. It is known that ð2Þ is enhanced with imbalance in electron density between the atoms or molecules involved in the optical process; 25) thus, the large figure obtained is an indication that significant polarization is induced in the CO phase.…”

Section: Resultsmentioning

confidence: 96%

Strong Optical Nonlinearity and its Ultrafast Response Associated with Electron Ferroelectricity in an Organic Conductor

et al. 2008

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We report experimental evidence for the generation of ferroelectric polarization in an organic conductor -[bis(ethylenedithio)tetrathiafulvalene] 2 I 3 obtained by optical second-harmonic generation. The spontaneous polarization emerges along with a metal-to-insulator transition that is driven by the Wigner crystallization of electrons. The strong optical nonlinearity and its ultrafast photoresponse demonstrated by this study exemplify the nature of the ferroelectric polarization that originates from the electron ordering.

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Section: Resultsmentioning

confidence: 96%

Strong Optical Nonlinearity and its Ultrafast Response Associated with Electron Ferroelectricity in an Organic Conductor

et al. 2008

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“…It is known that carrier contribution to the nonlinear susceptibility of conventional semiconductors increases when the Fermi level moves toward the non-parabolic region of the conduction or valence band. 32,33 Thus, surface doping of Bi 2 Se 3 may indeed lead to appreciable change of its surface nonlinear susceptibility. Further theoretical and experimental studies of how surface doping affects surface nonlinear susceptibility in relation to changes of surface band structure and surface carrier density will be useful.…”

Section: Resultsmentioning

confidence: 99%

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Shi

Yao

et al. 2016

Phys. Rev. B

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Second harmonic generation (SHG) from three-dimensional topological insulators originates from both surface and bulk, which does not allow probing of surface states unless the measurement can separate the two contributions. In this study, we used combined measurements of transmitted and reflected SHG from epitaxially grown Bi 2 Se 3 thin films of different thickness on BaF 2 , and a bulk Bi 2 Se 3 crystal, to deduce surface and bulk nonlinear susceptibilities of Bi 2 Se 3 separately. We found that the surface * E-mail: yrshen@berkeley.edu, wtliu@fudan.edu.cn 2 contribution to SHG was comparable to that from the bulk of the crystal, but becomes dominant in ultrathin films. In the latter case, contributions from both air/Bi 2 Se 3 and Bi 2 Se 3 /BaF 2 interfaces were significant, and exhibited a strong out-of-plane polar ordering. The bulk contribution came mainly from the space charge region (SCR), which was formed by Se vacancies aggregated at the air/Bi 2 Se 3 interface; its magnitude can provide an estimate on the field strength in the SCR. Clarification of surface and bulk contributions to SHG can help nonlinear optical techniques be used as a versatile in situ probe for topological insulators.3

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“…In this case, Eq. (6) is simplified considerably owing to the intrinsic permutation symmetry of χ e 1122 (−ω; ω, [105,[118][119][120][121]. As a result, Eq.…”

Section: Third-order Susceptibility Of Siliconmentioning

confidence: 99%

“…Note that Eq. (7) remains valid for third harmonic generation [86,118,119,[122][123][124][125]. Also note that the value of ρ can be complex in general.…”

Section: Third-order Susceptibility Of Siliconmentioning

confidence: 99%

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

844

699

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Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrödinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band. 1678-1687 (2006). 4. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A: Pure Appl. Opt. 8, 840-848 (2006). 5. M. Dinu, F. Quochi, and H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys.Lett. 82, 2954-2956 (2003). 6. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003). 7. H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, "Optical dispersion, two-photon absorption, and self-phase modulation in silicon waveguides at 1.5 μm wavelength," Appl. Phys. Lett. 80, 416-418 (2002 3685-3697 (1973). 109. T. R. Hart, R. L. Aggarwal, and B. Lax, "Temperature dependence of Raman scattering in silicon," Phys. Rev. B 1, 638-642 (1970). 110. A. Zwick and R. Carles, "Multiple-order Raman scattering in crystalline and amorphous silicon," Phys. Rev. B 48, 6024-6032 (1993). 111. R. Loudon, "The Raman effect in crystals," Adv. Phys. 50, 813-864 (2001). 112. J. R. Sandercock, "Brillouin-scattering measurements on silicon and germanium," Phys. Rev. Lett. 28, 237-240 (1972). 113. M. Dinu, "Dispersion of phonon-assisted nonresonant third-order nonlinearities," IEEE J. Quantum Electron.39, 1498-1503 (2003).

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Nonlinear Optical Susceptibilities in Group-IV and III-V Semiconductors

Cited by 204 publications

References 21 publications

Strong Optical Nonlinearity and its Ultrafast Response Associated with Electron Ferroelectricity in an Organic Conductor

Strong Optical Nonlinearity and its Ultrafast Response Associated with Electron Ferroelectricity in an Organic Conductor

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Nonlinear optical phenomena in silicon waveguides: modeling and applications

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