Nonlinear optical rectification and the second and third harmonic generation in Pöschl–Teller quantum well under the intense laser field

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

“…Recently, the effects of intense laser field on the electronic and optical properties of conventional unstrained GaAs QWs have been investigated in several works [8,[40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. Overall, these studies concluded that the energy levels and intersubband optical transitions in QWs with different shapes can be significantly controlled and modified by an intense laser field.…”

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

“…Electric-field induced changes in the magnitude of the THG peaks are related with the corresponding dipole matrix elements appearing in Eq. (5). Enhancement of the factor µ 01 µ 12 µ 23 µ 30 with increasing field is observed for all a values, but especially for the smallest range parameter it has more pronounced influence.…”

“…In these structures, enhanced quantum confinement effects result in observation of unique nonlinear optical behavior very different from their bulk counterparts [5][6][7]. Moreover, the adjustability of the optical susceptibility by changing their size, shape, environmental conditions and external fields, makes these materials attractive both from theoretical and experimental point of view [8].…”

Second-order nonlinear optical properties in a strained InGaN/AlGaN quantum well under the intense laser field

“…Among the nonlinear optical properties, more attention had been paid to the second-harmonic generation (SHG) [17][18][19][20][21][22][23][24][25][26] and optical rectification (OR) [23][24][25][26][27][28][29][30][31][32][33] coefficients. It is well known that these even-order nonlinear optical properties are only non-zero in asymmetric quantum systems.…”

“…Recently, several authors investigated the effects of intense laser field (ILF) on the electronic and optical properties of GaAs-based nanostructures such as: square [34][35][36][37], graded [37,38], semi-parabolic [39], parabolic [40], double-square [41], double-graded [42], V-shaped [43,44] and Pöschl-Teller [26] QWs, cylindrical quantum wire [45,46] and spherical quantum dot [47].…”