Nonlinear Optical Properties of Few‐Layer Rhenium Disulfide Nanosheets and Their Passively Q‐switched Laser Application

Liu, Shixin; Wang, Mengxia; Yin, Siyu; Xie, Zheng; Wang, Zhengping; Zhou, Shuyun; Chen, Ping

doi:10.1002/pssa.201800837

Cited by 18 publications

(17 citation statements)

References 37 publications

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“…As for the reported results on employing ReS 2 as saturable absorber, the laser performance showed steady improvements. With regards to integration, variety of transfer methods were utilized, such as embedding ReS 2 within polymer composite [ 64 ], optical driven deposition [ 65 ], spin coating [ 123 ] and drop casting [ 69 ]. Material fabrication techniques exhibited consistent progress in being more controllable such as CVD [ 127 ] and low-cost fabrication such as mechanical exfoliation [ 126 ].…”

Section: Discussion and Outlookmentioning

confidence: 99%

“…ReS 2 in bulk form has anisotropic optical characteristics that are recorded [ 77 ]. The present emphasis is on the material comprising few layers and the monolayer structure [ 69 ]. Figure 5 a depicts the photoluminescence (PL) spectrum of ReS 2 flakes with diverse quantity of layers [ 78 ].…”

Section: Structure Of Res 2 and Its Synthesis Methodsmentioning

confidence: 99%

“…Moreover, a Q-switched Nd-doped crystal laser was reported by Han et al close to ReS 2 bandgap at 950 nm [ 71 ]. Various schematic setups are demonstrated in Figure 15 in order to generate Q-switched lasers based on ReS 2 -SA as well as their output characteristics at 1047 nm, 1064 nm and 1557.3 nm [ 63 , 69 , 126 ].…”

Section: Photonic Applicationsmentioning

confidence: 99%

“… Spectral coverage for several types of pulsed fiber lasers and solid-state lasers generated by ReS 2 SA along with the corresponding output power. 1, Pr:YLF crystal [ 123 ]: 2, Nd:YAG crystal [ 71 ]: 3, Nd:YAG crystal [ 69 ]: 4, Nd:YAG crystal [ 123 ]: 5, Nd:YAG crystal [ 70 ]: 6, Nd:YAG crystal [ 69 ]: 7, Nd:GdLaNbO 4 crystal [ 127 ]: 8, Nd:YSAG crystal [ 124 ]: 9, Tm:YAP crystal [ 123 ]: 10, Er:YSGG crystal [ 62 ]: 11, Ho,Pr:LLF crystal [ 68 ]: 12, Er:SrF2 crystal [ 125 ]. …”

Section: Figurementioning

confidence: 99%

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A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

et al. 2021

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Rhenium Disulfide (ReS2) has evolved as a novel 2D transition-metal dichalcogenide (TMD) material which has promising applications in optoelectronics and photonics because of its distinctive anisotropic optical properties. Saturable absorption property of ReS2 has been utilized to fabricate saturable absorber (SA) devices to generate short pulses in lasers systems. The results were outstanding, including high-repetition-rate pulses, large modulation depth, multi-wavelength pulses, broadband operation and low saturation intensity. In this review, we emphasize on formulating SAs based on ReS2 to produce pulsed lasers in the visible, near-infrared and mid-infrared wavelength regions with pulse durations down to femtosecond using mode-locking or Q-switching technique. We outline ReS2 synthesis techniques and integration platforms concerning solid-state and fiber-type lasers. We discuss the laser performance based on SAs attributes. Lastly, we draw conclusions and discuss challenges and future directions that will help to advance the domain of ultrafast photonic technology.

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Section: Discussion and Outlookmentioning

confidence: 99%

Section: Structure Of Res 2 and Its Synthesis Methodsmentioning

confidence: 99%

Section: Photonic Applicationsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

et al. 2021

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“…is critical for the development of 2D-material-based photonic and optoelectronic devices [ 12 , 13 , 14 , 15 , 16 , 17 ]. Nonlinear saturable absorption is essential for generation of ultrafast laser pulses, which has been widely applied in bulk, fiber, and waveguide laser systems [ 18 , 19 , 20 , 21 , 22 , 23 ]. Recently, the prominent third-order optical nonlinearities and saturable absorption performance of CH 3 NH 3 PbBr 3 have been reported [ 24 , 25 , 26 , 27 , 28 ].…”

Section: Introductionmentioning

confidence: 99%

High-Stability Hybrid Organic-Inorganic Perovskite (CH3NH3PbBr3) in SiO2 Mesopores: Nonlinear Optics and Applications for Q-Switching Laser Operation

et al. 2021

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Hybrid organic-inorganic perovskite shows a great potential in the field of photoelectrics. Embedding methyl ammonium lead bromide (MAPbBr3) in a mesoporous silica (mSiO2) layer is an effective method for maintaining optical performance of MAPbBr3 at room temperature. In this work, we synthesized MAPbBr3 quantum dots, embedding them in the mSiO2 layer. The nonlinear optical responses of this composite thin film have been investigated by using the Z-scan technique at a wavelength of 800 nm. The results show plural nonlinear responses in different intensities, corresponding to one- and two-photon processing. Our results support that composites possess saturation intensity of ~27.29 GW/cm2 and varying nonlinear coefficients. The composite thin films show high stability under ultrafast laser irradiating. By employing the composite as a saturable absorber, a passively Q-switching laser has been achieved on a Nd:YVO4 all-solid-state laser platform to generate a laser at ~1 μm.

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Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal. [8] Meanwhile, ReS 2 demonstrates high stability, reasonable carrier mobility (≈30 cm 2 •V −1 s −1 ), [9] and high current on/ off ratio (≈10 6 ). [8] However, ReS 2 shows poor NLO response such as low SA coefficients (−5.99 cm GW −1 ) [1] and modulation depth (≈3%), [10] which severely hinders its application in ultrafast laser. [6,11] Recently, some 2D ReS 2 based van der Waals (vdW) heterostructures such as ReS 2 /MoS 2 , [12] ReS 2 /ReSe 2 , [13] ReS 2 /WSe 2 , [14] and ReS 2 / Graphene [15] have been constructed to improve linear optoelectronic devices [16] such as photodetectors, field-effect transistors, and solar cells, owing to their synergistic effect in the heterostructures. However, few NLO experiments have been demonstrated in ReS 2 based heterostructures. The influence of band alignment on NLO response still need to be unveiled.Bi 2 S 3 can be an elementary component for vdW heterostructure due to its high figure of merit (FOM ≈6.17 × 10 −14 esu cm), [17] environmental stability, excellent absorption coefficient (≈10 5 cm −1 ), [18] and tunable bandgap (from 1.28 to 1.84 eV [19][20] ). Furthermore, Bi 2 S 3 demonstrates relatively high SA coefficient (−63.38 cm GW −1 ) [17] and modulation depth (≈5.7%). [21] Complementarity in Bi 2 S 3 and ReS 2 would promise the heterostructure of Bi 2 S 3 and ReS 2 for "one plus one greater than two" NLO properties. Unlike traditional bonded heterostructures, these 2D vdW heterostructures can be easily integrated without lattice-matching limitation. [22] However, most vdW heterostructures are constructed by mechanical stacking or physical transfer process, which are not scalable for practical applications. [23] Besides, early methods may result in uncontrollable stacking orientation and unavoidable contamination in the transfer process. [24] Some recent reports of two-step vdW vapor epitaxial growth provide an opportunity towards scalable integration of 2D materials. [25,26] Importantly, the vdW vapor epitaxial growth shows the advantages: (I) efficient control in size and convenient growth in scale; (II) atomic uniformity at the interface; (III) layer-by-layer formation without alloys; (IV) compatibility with the current industrial technology. Even though Sb 2 Se 3 /WS 2 , [27] Bi 2 S 3 /MoS 2 , [28] and SnSe 2 /MoS 2 [24] have been successfully demonstrated by vdW vapor epitaxial growth, there is no report on the Bi 2 S 3 /ReS 2 , to our best knowledge. 2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two-step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize unifor...

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Nonlinear Optical Properties of Few‐Layer Rhenium Disulfide Nanosheets and Their Passively Q‐switched Laser Application

Cited by 18 publications

References 37 publications

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

High-Stability Hybrid Organic-Inorganic Perovskite (CH3NH3PbBr3) in SiO2 Mesopores: Nonlinear Optics and Applications for Q-Switching Laser Operation

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

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Nonlinear Optical Properties of Few‐Layer Rhenium Disulfide Nanosheets and Their Passively Q‐switched Laser Application

Cited by 18 publications

References 37 publications

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

High-Stability Hybrid Organic-Inorganic Perovskite (CH3NH3PbBr3) in SiO2 Mesopores: Nonlinear Optics and Applications for Q-Switching Laser Operation

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

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Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption