Nonlinear gain suppression in semiconductor lasers due to carrier heating

Willatzen, Morten; Uskov, Alexander V.; Mørk, Jesper; Olesen, H.; Tromborg, B.; Jauho, Antti–Pekka

doi:10.1109/68.87928

Cited by 143 publications

(41 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Carriers at the band edge are constantly removed due to stimulated emission. Thus, the remaining distribution has an effective temperature higher than the lattice temperature, which reduces the differential gain [6]. Carrier heating is higher for strained devices due to increased valence band curvature.…”

Section: Wide-bandwidth Lasersmentioning

confidence: 97%

Wide-bandwidth lasers and modulators for RF photonics

Dagli

1999

IEEE Trans. Microwave Theory Techn.

147

View full text Add to dashboard Cite

show abstract

Section: Wide-bandwidth Lasersmentioning

confidence: 97%

Wide-bandwidth lasers and modulators for RF photonics

Dagli

1999

IEEE Trans. Microwave Theory Techn.

147

View full text Add to dashboard Cite

show abstract

“…35,36 Based on the concept of carrier heating and free-carrier absorption, the models proposed for the gain compression [35][36][37] show that increases when the temperature increases, as shown in Fig. 9͑b͒.…”

Section: Extracted Parametersmentioning

confidence: 99%

Tradeoffs of vertical-cavity surface emitting lasers modeling for the development of driver circuits in short distance optical links

et al. 2005

View full text Add to dashboard Cite

In short-distance optical links, the development of driving circuits for vertical-cavity surface-emitting lasers ͑VCSELs͒ requires precise and computationally efficient VCSEL models. A small-signal model of a VCSEL is computationally efficient and simple to implement; however, it does not take into account the nonlinear output behavior of the VCSEL. In contrast, VCSEL models that are highly based on first principles cannot be implemented in standard circuit device simulators, because the simulation of eye diagrams becomes too time consuming. We present another approach using VCSEL models, which are based on the 1-D rate equations. Our analysis shows that they combine efficient extraction and short simulation time with an accurate calculation of eye diagrams over a wide range of ambient temperatures. As different implementations of the rate equations exist, tradeoffs between three different versions are presented and compared with measured GaAs oxideconfined VCSELs. The first model has a linear and the second a logarithmic function of the gain versus the carrier density. The third model considers the additional transport time for carriers to reach the active region with quantum wells. For parameter extraction, a minimum set of parameters is identified, which can be determined from fundamental measurements.

show abstract

“…When a pump pulse is transmitted through a SOA, it reduces the carrier population but "heats" the plasma (by removing "cool" carriers), thus the gain reduces. This process is called carrier heating (CH), which is a transient heating of electron and hole temperatures (Willatzen, 1991). Thus carriers are excited into the high momentum states.…”

Section: Wwwintechopencommentioning

confidence: 99%