Nonlinear excitonic optical absorption in GaInAs/InP quantum wells

Fox, A. M.; Maciel, A. C.; Shorthose, Matthew; Ryan, John F.; Scott, Michael; Davies, J. I.; Riffat, J.R.

doi:10.1063/1.98876

Cited by 36 publications

(8 citation statements)

References 16 publications

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“…It is generally admitted that F xc,sat is between ten to a hundred times higher than F xd,sat . 19,20 Note that the latter is concerned with the values we have reported above and the former constitutes the limit close to optical breakdown. Considering now that both α xd and F xd,sat increase with iron concentration, this furnishes a guideline that governs the DTR change with fluence at various Fe-doping levels as illustrated in Fig.…”

Section: Characteristics Of Sesatsmentioning

confidence: 97%

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

Lecourt

Ortaç

Guezo

et al. 2005

J. Nonlinear Optic. Phys. Mat.

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Erbium-doped unidirectional fiber ring laser has been passively mode-locked with a novel ultra-fast semiconductor saturable absorber used in transmission. The structure is based on InGaAs/InP multiple quantum wells grown on an InP substrate. Different structures with recovery time down to picosecond have been tested. Relaxation time reduction have been obtained by iron doping. With such structures, detrimental regimes such as Q-switch and Q-switch/ModeLock regimes have been avoided. Solitonic and slightly stretched-pulse dispersion regimes have been tested. The laser delivers for both, completely self-starting picosecond pulses of 8 mW maximum average output power at a repetition rate around 25 MHz.

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Section: Characteristics Of Sesatsmentioning

confidence: 97%

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

Lecourt

Ortaç

Guezo

et al. 2005

J. Nonlinear Optic. Phys. Mat.

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“…The saturation intensities of such samples [15] and [16] are 150 and 70 W∕cm 2 , respectively, corresponding to the carrier recovery times of 50 and 100 ns, respectively. These results show that the saturation fluence of the QW material is on the order of few μJ∕cm 2 .…”

Section: B Inverse Saturation Characteristics Of Reflectivitymentioning

confidence: 99%

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

Pradhan

2014

Appl. Opt.

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This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

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“…The saturation intensities of such samples used in [22] and [23] are 150 and 70 W∕cm 2 , respectively, corresponding to the carrier recovery times of 50 and 100 ns, respectively. These results show that the saturation fluence of the QWs material is of the order of a few μJ∕cm 2 .…”

Section: Nonlinear Fabry-pérot Analysismentioning

confidence: 99%

All-Optical 2R Regeneration With Contrast Enhancement in a Reflective Vertical Cavity Quantum-Wells Saturable Absorber

Pradhan

Mishra

Hussain

et al. 2013

J. Opt. Commun. Netw.

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Round-trip nonlinear phase-shift of an input signal due to optically induced thermal effects and saturable index change in a low intensity resonant reflective vertical cavity semiconductor (quantum wells) saturable absorber (VCSSA) is investigated theoretically for 2R (reamplification and re-shaping) regeneration. Calculations are carried out for a high contrast switching system to find the optimum value of parameters such as energy time filling factor (FF) of the input pump signal, top mirror reflectivity (R t ) of the Fabry-Pérot cavity and wavelength detuning from the low intensity resonant wavelength of the Fabry-Pérot cavity. It is observed that the optimum contrasts are almost the same for a wavelength tuning range as large as 8 nm around the low intensity resonance wavelength of the InGaAs/InP quantum-wells-based VCSSA with R t of 0.72 and FF of 0.10. The simulation shows that the required average input power is minimal for high contrast 2R regeneration when operated in the short wavelength side.

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Nonlinear excitonic optical absorption in GaInAs/InP quantum wells

Cited by 36 publications

References 16 publications

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

All-Optical 2R Regeneration With Contrast Enhancement in a Reflective Vertical Cavity Quantum-Wells Saturable Absorber

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