Nonlinear Electronic Transport Behavior of &lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$\Upsilon$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt;-Graphyne Nanotubes

Ahmadi, Aidin; Jafari, Homayoun; Rajipour, Mehdi; Fattahi, Rasoul; Faghihnasiri, Mahdi

doi:10.1109/ted.2018.2890684

Cited by 10 publications

(4 citation statements)

References 43 publications

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“…Among TMDs, MoS 2 is the most widely investigated as a semiconducting TMD. MoS 2 -based transistors have shown an extremely high room-temperature current on/off ratio of ≈ 108 and mobility of higher than 200 cm 2 /(V s), which is comparable to the mobility achieved in thin silicon films [13] and graphene nanoribbons [14][15][16][17]. Other members in the TMD family are still in the stage of exploration.…”

Section: Introductionmentioning

confidence: 98%

A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

et al. 2020

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We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

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Section: Introductionmentioning

confidence: 98%

A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

et al. 2020

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“…Therefore, decreasing the electrical conductivity implies shrinking the electronic part as the latter is proportional to the former as dictated by the Wiedemann-Franz law κ el =LσT, where L is the Lorentz number. Most of current work made to maximise the figure of merit is based on creating nanostructures that take advantage of quantum confinement [8,9]. The most popular example is the seminal work by Hicks and Dresselhaus [10], who predicted increases of the figure of merit in multilayers of Bi 2 Te 3 by factors of up to 13, due to highly anisotropic effective-mass tensor.…”

Section: Introductionmentioning

confidence: 99%

Strain engineering of the electronic and thermoelectric properties of titanium trisulphide monolayers

Saiz

Rurali

2020

Nano Ex.

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The goal of this work is to evaluate the effect of mechanical strain on a number of electronic and thermoelectric properties of TiS 3 monolayers. We have used density-functional theory (DFT) calculations at the hybrid HSE06 level to evaluate the response of the electronic band gap and mobilities, as well as the thermopower, the electrical conductivity, the electronic contribution to the thermal conductivity and the power factor. Our calculations indicate that the band gaps can be increased by 44.25%, reaching a value of 1.55 eV from that of the undeformed case of 1.07 eV. The behaviour of HSE06 band gaps agrees well with that calculated at the G 0 W 0 level of theory. We evaluate the variation of electron mobilities with strain and discuss the possible causes of the existent disagreement between experiments and simulations. In addition, our calculations predict small changes in the Seebeck coefficient, whose S y component can be enhanced by up to 11% with a compression of 5% along the y-axis. On the other hand, the electrical conductivity experiences higher variations, nearly doubling its value from the undeformed case under the semiconductor regime of doping and mechanical deformation. Finally, our predicted power factors can be enhanced by nearly twice under the same conditions by which the electrical conductivity is also improved, indicating that the latter drives the optimisation of the former.

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“…Equation ( 21) indicates that the response amplitude a is a function of σ and the excitation amplitude f j . Substituting Equation ( 18) into Equation ( 15), and then substituting the result into Equation (11), one can obtain the first order approximate solution of Equation (10).…”

Section: Primary Resonance Of Swcntsmentioning

confidence: 99%

“…Ahmadi has described in detail the zigzag and armchair γ-graphene-acetylene nanotubes using the Density functional theory function and non-equilibrium Green's function methods. He also reported the application prospect of these devices in nano transistors and switching memory circuits [10][11][12]. At the same time, CNTs also have technical potential in field emission, nano-electronic devices, micro-electro-mechanical system, biosensing, highfrequency nanoelectronics, and so on [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 96%

Nonlinear Vibrations of Carbon Nanotubes with Thermal-Electro-Mechanical Coupling

2023

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Carbon nanotubes (CNTs) have wide-ranging applications due to their excellent mechanical and electrical properties. However, there is little research on the nonlinear mechanical properties of thermal-electro-mechanical coupling. In this paper, we study the nonlinear vibrations of CNTs by a thermal-electro-mechanical coupling beam theory. The Galerkin method is used to discretize the partial differential equation and obtain two nonlinear ordinary differential equations that describe the first- and second-order mode vibrations. Then, we obtain the approximate analytical solutions of the two equations for the primary resonance and the subharmonic resonance using the multi-scale method. The results indicate the following three points. Firstly, the temperature and electric fields have a significant influence on the first-mode vibration, while they have little influence on the second-mode vibration. Under the primary resonance, when the load amplitude of the second mode is 20 times that of the first mode, the maximal vibrational amplitude of the second is only one-fifth of the first. Under the subharmonic resonance, it is more difficult to excite the subharmonic vibration at the second-order mode than that of the first mode for the same parameters. Secondly, because the coefficient of electrical expansion (CEE) is much bigger than the coefficient of thermal expansion (CTE), CNTs are more sensitive to changes in the electric field than the temperature field. Finally, under the primary resonance, there are two bifurcation points in the frequency response curves and the load-amplitude curves. As a result, they will induce the jump phenomenon of vibrational amplitude. When the subharmonic vibration is excited, the free vibration term does not disappear, and the steady-state vibration includes two compositions.

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Nonlinear Electronic Transport Behavior of <inline-formula> <tex-math notation="LaTeX">$\Upsilon$ </tex-math> </inline-formula>-Graphyne Nanotubes

Cited by 10 publications

References 43 publications

A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

Strain engineering of the electronic and thermoelectric properties of titanium trisulphide monolayers

Nonlinear Vibrations of Carbon Nanotubes with Thermal-Electro-Mechanical Coupling

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