Nonlinear electrical properties of zinc oxide ceramics with B2O3 additions

Glot, A.B.; Mazurik, S. V.

doi:10.1007/bf02757969

Cited by 16 publications

(29 citation statements)

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“…The thickness of intergranular phase is varied along the GB and from one GB to another and can be $ 2 nm. 50,51 The electrical conductivity of n-type ZnO grains is $ 1-5 Ohm À1 cm À1 due to relatively high donor density ($ 10 18 cm À3 ). 6 The intrinsic defects (interstitial zinc or oxygen vacancy) are donors in ZnO lattice.…”

Section: Samples and Research Techniquementioning

confidence: 99%

“…[1][2][3][4][5][6][7] As a mechanism and search of ways to improve the stability of ZnO varistors against degradation are practically important problems. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] The general concepts of a deformation of the grainboundary potential barriers (a decrease in their height and width due to a movement result of dc degradation, the asymmetry of current-voltage characteristics appears. [1][2][3][4][5] The understanding of degradation of some ions in electric field) are the physical basis for the interpretation of this effect.…”

Section: Introductionmentioning

confidence: 99%

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Percolation effects in dc degradation ofZnOvaristors

2015

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For quantitative estimation of the degree of electrical disorder (electrical inhomogeneity) in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample, the comparison of threshold electric fields (onsets of highly nonlinear current-voltage characteristics) in ceramics and single grain boundary (GB) is suggested and approved. At dc degradation similar behavior of the current-voltage characteristics of ZnO varistor ceramics and single GB is observed. The percolation model of Shklovskii-De Gennes is applicable for the description of a disorder in ZnO varistor ceramics. The degree of the disorder in ZnO varistor ceramics is not dependent on the duration of dc degradation at least at degradation time below 60 h. At voltages close to the onset of a highly nonlinear region of current-voltage characteristic the correlation radius of infinite cluster is $ 5 times greater than the average grain size.

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Section: Samples and Research Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Percolation effects in dc degradation ofZnOvaristors

2015

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“…There have also been a large number of studies addressing the effects of several metal oxide additions, such as Bi 2 O 3 , MnO, and Sb 2 O 3 , on the sintering behaviour of ZnO varistors [2,19,20]. However, there are only a few literature reports concerning the electrical and microstructure properties of B 2 O 3 -doped ZnO ceramics [21][22][23][24][25][26]. Glot and Mazurik reported that the introduction of B 2 O 3 into ZnO ceramics improves the stability of their I-V characteristics [25].…”

Section: Introductionmentioning

confidence: 99%

“…However, there are only a few literature reports concerning the electrical and microstructure properties of B 2 O 3 -doped ZnO ceramics [21][22][23][24][25][26]. Glot and Mazurik reported that the introduction of B 2 O 3 into ZnO ceramics improves the stability of their I-V characteristics [25]. More recently, it has been stated that the electrical stability of ZnO varistors under dc conditions can be improved with the addition of B 2 O 3 using the nano-coating method, which was evidenced by a smaller degradation rate coefficient and a weaker reduction in resistance of grain boundaries during degradation [26].…”

Section: Introductionmentioning

confidence: 99%

Grain growth kinetics for B2O3-doped ZnO ceramics

Yüksel

Özkan

2015

Materials Science-Poland

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Grain growth kinetics in 0.1 to 2 mol % B 2 O 3 -added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation G n = K 0 ·t·exp(−Q/RT) together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250°C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 0.1 mol % B 2 O 3 -doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B 2 O 3 content to 1 mol %, the grain growth exponent value (n) and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn 3 B 2 O 6 formed when the B 2 O 3 content was 1 mol %. The formation of Zn 3 B 2 O 6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 2 mol % B 2 O 3 -doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning) mechanism in the liquid phase sintering.

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“…But it still can't be technically used. SnO2-Bi2O3-Co3O4-BaO-Nb2O5 varistor with nonlinearity coefficient of 20 was prepared in 1989, 6) and SnO2-CoO-Nb2O5-Cr2O3 varistor with nonlinearity coefficient of 41 was reported in 1995. 7) Many research articles on SnO2-based varistor materials are published in the past ten years.…”

Section: Introductionmentioning

confidence: 99%

SnO2-based varistors capable of withstanding surge current

Chen

2009

J. Ceram. Soc. Japan

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Nonlinear electrical properties of zinc oxide ceramics with B2O3 additions

Cited by 16 publications

References 1 publication

Percolation effects in dc degradation ofZnOvaristors

Percolation effects in dc degradation ofZnOvaristors

Grain growth kinetics for B2O3-doped ZnO ceramics

SnO2-based varistors capable of withstanding surge current

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