Nonlinear diffusion potential induced anti-ohmic effect

Abstract

Novel transport behavior of carriers always generates new types of electronic elements. For traditional resistor element, the voltage is directly proportional to drift current regardless of Joule heat, which can be credibly described by Ohm’s law. There are still some new types of materials such as memristor and Weyl metal that do not follow Ohm’s law, and they have drawn significant attention. In this work, we theoretically and experimentally investigated the transport behavior of diffusion current near the interface of the silicon-based Schottky junction. It is clearly observed that the output voltage in the diffusion path could be higher (lower) when the resistance was lower (higher), even under identical diffused current. Deep theoretical analysis is also carried out, which is found to be in good agreement with the experimental results. These results suggest that the transport behavior of diffusion carriers is quite different from the drift carriers. This study may provide a foundation for fundamental research and device application based on the transport of diffusion carriers near the interface.