Nonlinear behavioral models of HEMTs using response surface methodology

Abstract

Abstract-In this paper, the response surface methodology is proposed to model nonlinear microwave devices using different sampling techniques. Each of the methods represents a distinct approach: exploration-oriented (Voronoi tessellation), nonlinearity-exploitation-oriented (LOcal Linear Approximation) and model-error-minimization-oriented. This allows to build accurate and compact global behavioral models of drain voltage at different harmonics of a 0.15 µm GaAs HEMT transistor with only few hundreds of samples. After choosing the best sampling technique, two types of global models are compared: Radial Basis Function and Kriging. It is shown that the modeling convergence depends on the model type, and better results are obtained using the Kriging model.

Research on transient insulation numerical analysis method of circuit breaker in GIS under lightning impulse voltage

“…RSM is a comprehensive test technique based on statistics, which deals with the input–output conversion relationship of complex system and fits the original implicit limit state function using the response surface function. RSM can preferably solve the time‐consuming, non‐smooth optimisation problems [12–17].…”