Nonlinear absorption properties of ZnO and Al doped ZnO thin films under continuous and pulsed modes of operations

Sandeep, K.; Bhat, Shreesha; Dharmaprakash, S. M.

doi:10.1016/j.optlastec.2017.12.031

Cited by 46 publications

(9 citation statements)

References 27 publications

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“…This can be interpreted in terms of the large difference between atomic and ionic radii of Zn atoms and In atoms (atomic and ionic radii of 156 pm and 76 pm). Furthermore, Al-doped ZnO and Ga-doped ZnO thin films are found to exhibit all ZnO diffraction peaks at (100), (002), and (101) diffraction planes, in good agreement with the findings of [5,71,72] and T. Ivanova et al [73]. In addition, XRD patterns revealed that all crystallographic orientations are shifted into small Bragg's angles, that could be explained in terms of the difference between atomic and ionic radii of Zn atoms and Al atoms (atomic and ionic radii of 118 pm and 53 pm) and Ga atoms (atomic and ionic radii of 136 pm and 61 pm).…”

Section: X-ray Diffraction Analysissupporting

confidence: 86%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Section: X-ray Diffraction Analysissupporting

confidence: 86%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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“…However, unlike the conventional methods, the precursor (ZnO powder) used for our work is extremely chemically and thermally stable. With increasing the aluminum concentration, the grain size decreased, which is similar to other results, [ 7,15,16,32–37 ] the energy band gap increased, which has been found by other methods. [ 7,11,12,13,15–17,19,28,30,32–34,38–44,45–51 ] The conductivity and carrier concentration increased with increasing the aluminum, which is similar to other reported results by other methods.…”

Section: Resultssupporting

confidence: 90%

“…It was found that the grain size decreased with an increase in the aluminum concentration, which is similar to other results. [7,15,16,[32][33][34][35][36][37]…”

Section: Crystallite Size Estimationmentioning

confidence: 99%

Growth of Aluminum Doped Zinc Oxide Nanostructure Thin Films by Nonconventional Sol‐Gel Method

Alrefaee

Singh

Das

2022

Macromolecular Symposia

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The present work demonstrates the growth of undoped and Al doped ZnO (AZO) thin films by using nonconventional sol-gel method. The structural, morphological, optical, and electrical properties of obtained thin films are studied. X-ray diffraction (XRD) analysis confirms hexagonal wurtzite structures for both undoped and doped thin films. The crystallite size is found between 15 and 30 nm. Scanning electron microscope (SEM) images show that the films have approximately uniform morphologies, consisting in several flower-like aggregates with nanosized multipetals. From the optical properties, it is found that with the increase in the doping concentration, there is a decrease in the absorption coefficient in the visible wavelength range. It is also noticed that the increase in doping concentration causes an increase in bandgap (E g ) and a decrease in extinction coefficient. Urbach energy decreases with increase in the doping concentration. In the Hall effect study, it is observed that the conductivity and carrier concentration increase sharply with increasing the aluminum quantity. The causes and significance of these observations are discussed.

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“…, 𝑍 0 2 = 2𝜋𝜔 0 2 λ ⁄ is the Rayleigh range of the beam. The observed SA behavior of the nanostructures in present case is attributed to thermo-optic effects, due to the utilization of cw laser source [29]. During laser excitation all the available higher energy states are filled with photo generated carriers resulting in bleaching of carriers in the ground state.…”

Section: Nonlinear Optical Propertiesmentioning

confidence: 61%

Third-order nonlinear optical characteristics of Er3+-doped BaMoO4 nanostructures

Sharath

Rahulan

Flower

et al. 2021

J Mater Sci: Mater Electron

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We report the third order nonlinear optical properties of Er 3+ -doped BaMoO4 nanostructures, and its dependence on Er dopant concentration. BaMoO4 nanostructures with different concentration of Er were synthesized by chemical precipitation method and were characterized by UV-Vis absorption, X-ray diffraction (XRD), transmission electron microscopy (TEM) and fluorescence measurements. The incorporation of Er ions shifted the absorption band of BaMoO4 towards higher wavelength and enhanced the light absorption in the visible region.XRD patterns showed that the powders crystallize in scheelite-type tetragonal structure. The nonlinear optical behavior of the nanostructures was investigated by a Z-scan technique at 532 nm using continuous wave Nd:YAG laser. Experimental results suggested that the addition of Er can considerably enhance the nonlinear absorption and refractive index coefficients of BaMoO4 which could be used as a potential for nonlinear optical device applications.

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Nonlinear absorption properties of ZnO and Al doped ZnO thin films under continuous and pulsed modes of operations

Cited by 46 publications

References 27 publications

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Growth of Aluminum Doped Zinc Oxide Nanostructure Thin Films by Nonconventional Sol‐Gel Method

Third-order nonlinear optical characteristics of Er3+-doped BaMoO4 nanostructures

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