Nonionizing energy loss (NIEL) for heavy ions

Messenger, S.R.; Burke, E.A.; Summers, G.P.; Xapsos, M.A.; Walters, Robert J.; Jackson, Edward M.; Weaver, B. D.

doi:10.1109/23.819126

Cited by 187 publications

(96 citation statements)

References 12 publications

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“…[110][111][112][113][114][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129] These mechanisms are due to interactions with the nuclei and the electrons of the target material, respectively. 126 If the ions collide with atoms in the GaN, the positively charged ions are Coulombically repelled by the positive cores of the lattice atoms.…”

Section: Stopping Of Ions and Related Lattice Damage In Ganmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

255

125

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Stopping Of Ions and Related Lattice Damage In Ganmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

255

125

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“…We used the displacement damage dose methodology developed by the Naval Research Laboratory for modeling solar cell degradation in space environments to scale the irradiation damage [14,15]. The displacement damage dose (D d , in units of MeV/g) is defined as the product of the non-ionizing energy loss (NIEL) and the particle fluence.…”

Section: Methodsmentioning

confidence: 99%

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Jones

et al. 2005

MRS Proc.

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“…In silicon T n is 21 eV [22]. For polymers it is difficult to estimate the exact displacement damage threshold as they contain more than one type of chemical bonds but it typically lies in the range of 10-30 eV [23].…”

Section: Proton Irradiation Conditionsmentioning

confidence: 99%

“…The total displacement dose (TDD) was deduced based on the non-ionizing energy loss (NIEL) using the Kinchin-Pease relationship [22]:…”

Section: Proton Irradiation Conditionsmentioning

confidence: 99%

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

Bandi

Polido-Gomes

Neels

et al. 2013

J. Microelectromech. Syst.

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Abstract-The susceptibility of single-crystal silicon and SU-8 resonators to proton-radiation induced degradation was investigated. Both materials are in widespread use for microsystems structures, thus the stability of the mechanical properties must be ensured over the full device lifecycle. Effects of spacerelevant proton doses were examined by monitoring minute changes in the Young's modulus and by structural investigations using high-resolution X-ray diffraction (HRXRD). Single crystal silicon resonators were exposed to 10 MeV and 60 MeV protons with doses up to 10 13 cm −2 . Even at the highest doses neither a change of the Young's modulus was observed nor did Xray diffraction indicate the formation of elevated concentrations of structural defects. The compatibility of SU-8 with inorbit radiation environments was investigated at fluences of 10 10 -10 12 cm −2 using protons with energies ranging from 10 MeV to 200 MeV. Its elastic modulus changed by less than 5.5% at the highest doses.[2013-0009]

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Nonionizing energy loss (NIEL) for heavy ions

Cited by 187 publications

References 12 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

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