Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature
Thi-Thuy-Nga Nguyen,
Kazunori Shinoda,
Shih-Nan Hsiao
et al.
Abstract:Ternary metal carbide TiAlC has been proposed as a metal gate material in logic semiconductor devices. It is a hard-to-etch material due to the low volatility of the etch byproducts. Here, a simple, highly controllable, and dry etching method for TiAlC has been first presented using nonhalogen N 2 /H 2 plasmas at low pressure (several Pa) and 20 °C. A capacitively coupled plasma etcher was used to generate N 2 /H 2 plasmas containing active species, such as N, NH, and H to modify the metal carbide surface. The… Show more
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