Nonequilibrium Statistical Mechanical Models for Photon Breeding Processes Assisted by Dressed-Photon-Phonons

Katori, Makoto; Kobayashi, Hirotsugu

doi:10.1007/978-3-319-49013-7_2

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“…Finally, the system reaches the stationary state. This temporal decrease in the device temperature, and the temporal increase in the emitted light intensity, have been theoretically reproduced by a stochastic model of the spatial distribution of B atoms, which was controlled by DPPs [13].…”

Section: Mesh-electrode Type Ledmentioning

confidence: 74%

Principles and practices of Si light emitting diodes using dressed photons

Ohtsu¹

2019

Adv. Mater. Lett.

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This paper reviews basic research and technical developments on silicon (Si) light-emitting diodes (Si-LEDs) fabricated by using a novel dressed-photon-phonon (DPP)-assisted annealing method. These devices exhibit unique light emission spectral profiles in the wavelength range 900-2500 nm, including novel photon breeding features. The highest optical output power demonstrated was as high as 2.0 W. It is pointed out that boron (B) atoms, serving as p-type dopants, formed pairs whose length was three-times the lattice constant of the host Si crystal. These B atom pairs are the origin of the photon breeding. It is pointed out that photon breeding took place with respect to photon spin. Furthermore, recent measurements show that the B atom pairs tend to form a chain-like configuration.

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Section: Mesh-electrode Type Ledmentioning

confidence: 74%