Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers

Shcherbatenko, M.; Tretyakov, I. V.; Lobanov, Y.; Maslennikov, S. N.; Kaurova, N.; Finkel, Matvey; Voronov, B.; Gol'Tsman, G.; Klapwijk, T. M.

doi:10.1063/1.4963691

Cited by 14 publications

(18 citation statements)

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“…The synthesis of superconducting transition-metal nitrides is of technological relevance in the design of devices such as tunnel junctions [1] and electromagnetic radiation detectors [2,3]. The molybdenum nitrides present several superconducting crystalline phases: γ-Mo 2 N (cubic) with T c ~ 5 K [4], β-Mo 2 N (tetragonal) with superconducting critical temperature T c ~ 5 K [5] and δ-MoN (hexagonal) with T c ~ 13 K [6,7].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline δ-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive sputtering at room temperature

et al. 2018

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We report on the synthesis and characterization of nanocrystalline δ-MoN by crystallization of amorphous thin films grown on (100) Si by reactive sputtering at room temperature.Films with chemical composition MoN were grown using a deposition pressure of 5mTorr with a reactive mixture of Ar/(Ar+N 2 )=0.5. The as-grown films display mostly amorphous structure. Nanocrystalline δ-MoN phase is obtained after annealing at temperatures above 600 °C. The superconducting critical temperature T c depends on film thickness. Thick films (170 nm) annealed at 700 °C for 30 min display a T c = 11.2 K (close to the one reported for bulk specimens: 13 K), which is gradually suppressed to 7.2 K for 40 nm thick δ-MoN films. Our results provide a simple method to synthesize superconducting nitride thin films on silicon wafers with T c above the ones observed for conventional superconductors such as Nb.

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Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline δ-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive sputtering at room temperature

et al. 2018

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“…Unfortunately, an analysis of the various noise sources could not be presented in this review, because systematic studies are not yet available. An exception is the subject of quantum noise, as treated in (E.L. Kollberg and K.S.Yngvesson, 2006), which has received experimental support in work of Zhang et al (Shcherbatenko et al, 2016)) (Zhang et al, 2010). The present review might stimulate further work in this direction.…”

Section: Introductionmentioning

confidence: 80%

“…Al-1 (Boogaard et al, 2004;Vercruyssen et al, 2012) 160 124 ≃ 6 10 3 10 4 ξ < L < Λee Al-2 (Siddiqi et al, 2002) 10 50 ≃ 6 10 3 2.5 10 3 L ≃ ξ < Λee Nb (Burke et al, 1999(Burke et al, , 1996Gershenzon et al, 1990) 1 40 100 100 L ≈ ξ, Λee NbN (Shcherbatenko et al, 2016) 0.5 4 2.5-6.5 11-18 ξ < Λee << L of the vortices. In contrast in Section III.C we have emphasized that superconductors depend very sensitively on the distribution-function f (E) and much more subtle than can be captured in a local electron temperature T e (x).…”

Section: Distributed Superconducting Order Parameter Model: If Banmentioning

confidence: 98%

“…12 Resistance as a function of temperature scaled on the normal state resistance just above Tc1 and multiplied by the width W for the set of devices listed in Table I (Table I). (Reproduced with permission from the authors (Shcherbatenko et al, 2016)) defined length of 0.4 µm, as is evident from the vertical axis. The value of R peak in Table I will in the following be taken as the resistivity in the normal state of the superconducting film of the particular device, which will also be a measure of the elastic mean free path and the diffusion constant.…”

Section: A Normal Equilibrium Reservoirsmentioning

confidence: 99%

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Engineering Physics of Superconducting Hot-Electron Bolometer Mixers

Klapwijk

Semenov

2017

IEEE Trans. THz Sci. Technol.

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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good quality superconductor-insulator-superconductor (SIS) devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal metal-superconductor bilayer, connected to a thin film of a narrow, short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of localoscillator power. Despite this technological simplicity its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge conversion resistance occurring at an normal-metal-superconductor interface and a resistance due to timedependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a non-uniform superconducting environment set up by the bias-conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy-relaxation rate. Meanwhile several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.

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“…The multilayer NbN/Ti/Au has a critical temperature Tc2 lower than the Tc1 of the NbN bridge. The cleaning process of the Si substrate surface allows us to fabricate devices with a Tc1 deviation not more than 0.1K, for example, the in-situ technology presented in [7] gives a Tc1 dispersion of about 0,7-0,8 K. Fig. 2 presents a family of R (T) characteristics of NbN HEBs.…”

Section: [2] Resultsmentioning

confidence: 99%

Technology for NbN HEB based multipixel matrix of THz range

et al. 2018

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—The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.

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Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers

Abstract: Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometersShcherbatenko, M.; Tretyakov, I.; Lobanov, Yu; Maslennikov, S. N.; Kaurova, N.; Finkel, Matvey; Voronov, B.; Goltsman, G.; Klapwijk, Teun

Cited by 14 publications

References 15 publications

Synthesis of nanocrystalline δ-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive sputtering at room temperature

Synthesis of nanocrystalline δ-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive sputtering at room temperature

Engineering Physics of Superconducting Hot-Electron Bolometer Mixers

Technology for NbN HEB based multipixel matrix of THz range

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