Nonequilibrium in metallic microstructures in the presence of high current density

Bergmann, Gerd; Wei, Wei; Zou, Yao; Mueller, R. M.

doi:10.1103/physrevb.41.7386

Cited by 75 publications

(50 citation statements)

References 26 publications

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“…This T 2 behavior can be partly explained by the scattering from the static potential, but this is not the case, e.g., in thin gold film. 18 If the impurities are fully vibrating with the lattice, which is the case in heavily doped silicon, the relaxation rate is proportional to T 4 : e-ph Ϫ1 ϰT 4 l, 27,28 where l is the electron mean free path. This behavior in dirty limit has been derived by Thouless 29 and Reizer.…”

Section: Introductionmentioning

confidence: 99%

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Kivinen¹,

Savin²,

Zgirski³

et al. 2003

Journal of Applied Physics

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Articles you may be interested in Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 90, 866 (2001) Electron-phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T 6 . Utilization of a superconductor-semiconductor-superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann-Franz law.

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Section: Introductionmentioning

confidence: 99%

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Kivinen¹,

Savin²,

Zgirski³

et al. 2003

Journal of Applied Physics

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“…The electron-phonon interaction is accordingly enhanced. This behavior was also observed in experiments [131][132][133].…”

Section: Hot-electron Effect In Bulk Resistorssupporting

confidence: 82%

Strongly coupled, low noise dc-SQUID amplifiers

Pleikies¹

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“…As the phonon mediated dephasing rate 1/τ ph i ∝ τ −1 ǫ [10] we find an important relation 1/τ ph i ∝ τ iv T 4 e . As already pointed above screening plays no role in 1/τ qλ and as a result intervalley scattering induced electron-phonon energy flow rate in Eq.…”

mentioning

confidence: 64%

“…The understanding of thermal e-ph coupling is important for several low temperature devices such as microbolometers, calorimeters and on chip refrigerators [4,9]. This coupling plays also an important role in correct interpretation of low temperature experiments [5] and the e-ph energy relaxation rate gives direct information about phonon mediated electron dephasing [10].Interaction between electrons and phonons is strongly affected by the disorder of the electron system and, therefore, the problem is commonly divided into two special cases: pure and impure (or diffusive) limit of e-ph interaction. The cross-over between these two regions is defined as ql = 1 , where q is the phonon wavevector and l the electron mean free path.…”

mentioning

confidence: 99%

Intervalley-Scattering-Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

Prunnila

Kivinen

Savin³

et al. 2005

Phys. Rev. Lett.

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We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range 3.5 − 16.0 × 10 25 m −3 are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment. Since the low temperature hot electron experiments by Roukes et al.[1], the energy transport between electrons and phonons has continued to be a topical subject. Recently, there has been significant experimental and theoretical interest in the electron-phonon (e-ph) energy relaxation in metals and semiconductors at low temperatures [2,3,4,5,6,7,8]. The understanding of thermal e-ph coupling is important for several low temperature devices such as microbolometers, calorimeters and on chip refrigerators [4,9]. This coupling plays also an important role in correct interpretation of low temperature experiments [5] and the e-ph energy relaxation rate gives direct information about phonon mediated electron dephasing [10].Interaction between electrons and phonons is strongly affected by the disorder of the electron system and, therefore, the problem is commonly divided into two special cases: pure and impure (or diffusive) limit of e-ph interaction. The cross-over between these two regions is defined as ql = 1 , where q is the phonon wavevector and l the electron mean free path. If the whole phonon system is to be considered then the phonon wavevector can be conveniently replaced by the thermal phonon wave vector q T = k B T / v, where T is the temperature of the lattice and v the sound velocity. Recent theory for single-valley semiconductors [8] predicts that the e-ph energy relaxation is strongly enhanced when the system enters from the pure limit (ql > 1) to the diffusive limit (ql < 1). The behavior is the opposite in comparison to metals where it is well known, since the pioneering work by A. B. Pippard [11], that the disorder of the electron system tends to suppress the e-ph energy relaxation (see also Ref.[2]). In semiconductors, due to small electron density, the e-ph interaction can be described by deformation potential coupling constants, which do not depend on the electronic variables, while in metals the coupling strongly depends on the electron momentum [12]. This fundamental difference eventually leads to disorder enhancement of the relaxation in the diffusive limit in single-valley semiconductors [8].In many-valley semiconductors the situation is further altered due to intervalley scattering, which is the topic of our work. Due to lack of screening the e-ph energy flow rate is strongly enhanced in many valley semiconductors in comparison to single valley ones at diffusive low temperature limit. We approach the e-ph energy transport problem by first considering the phonon energy attenuation r...

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Nonequilibrium in metallic microstructures in the presence of high current density

Cited by 75 publications

References 26 publications

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Strongly coupled, low noise dc-SQUID amplifiers

Intervalley-Scattering-Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

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