Nonequilibrium Green’s function method: Büttiker probes for carrier generation and recombination

Wang, Kuang-Chung; Chu, Yuanchen; Valencia, Daniel; Geng, Junzhe; Charles, James; Sarangapani, Prasad; Kubis, Tillmann

doi:10.1109/sispad.2018.8551714

Cited by 1 publication

(1 citation statement)

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“…The carrier transport in such devices depends on three factors: 1) the interaction between confined states in quantum wells and propagating states in conduction and valence bands, 2) the BTBT process of confined states in quantum wells, and 3) the scattering effects that thermalize carriers within the quantum well [14], [15]. Therefore, the accurate atomistic quantum transport simulation, including scattering mechanisms, is the fundamental approach to model such devices [16]- [18].…”

Section: Introductionmentioning

confidence: 99%

Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation

Chen,

Ilatikhameneh,

Huang

et al. 2020

Preprint

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The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NEGF approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode space approximation to simulate triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60mV/dec transfer characteristic under realistic scattering conditions.

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