Nondegenerate two-photon absorption in GaAs/AlGaAs multiple quantum well waveguides

Abstract

We present femtosecond pump-probe measurements of the nondegenerate (1960 nm excitation and 1176-1326 nm probe) two-photon absorption spectra of 8 nm GaAs/12 nm Al0.32Ga0.68As quantum well waveguides. Experiments were performed with light pulses co-polarized normal and tangential to the quantum well plane. The results are compared to perturbative calculations of transition rates between states determined by the k · p method with an 8 or 14 band basis. We find excellent agreement between theory and experiment for normal polarization, then use the model to support predictions of orders-of-magnitude enhancement of nondegenerate two-photon absorption as one constituent photon energy nears an intersubband resonance.

Investigation of the electro-optical characteristics of GaAs/AlGaAs multiple quantum well grown by metal-organic vapor phase epitaxy

“…The investigation of the luminescence properties of quantum well structures provide fundamental knowledge for manufacturing quantum well photoelectronic devices; such as quantum well lasers, quantum well photodetectors and quantum well photoconductive switches. However, many studies discuss the photoluminescence emission of GaAs / AlGaAs quantum wells [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

Investigation of the Electro-Optical Characteristics of GaAs/AlGaAs Multiple Quantum Well Grown by Metal Organic Vapor Phase Epitaxy

“…The investigation of the luminescence properties of quantum well structures provide fundamental knowledge for manufacturing quantum well photoelectronic devices; such as quantum well lasers, quantum well photodetectors and quantum well photoconductive switches. However, many studies discuss the photoluminescence emission of GaAs / AlGaAs quantum wells [1][2][3][4][5][6][7][8][9][10][11][12][13].…”