Noncollinear antiferromagnetic 
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 films

Μάρκου, Αναστάσιος; Taylor, James M.; Kalache, Adel; Werner, P.; Parkin, Stuart S. P.; Felser, Claudia

doi:10.1103/physrevmaterials.2.051001

Cited by 65 publications

(44 citation statements)

References 39 publications

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“…Thus, it is important to realize epitaxial films with two different orientations: (0001) films where the Kagome plane is in the plane of the film, and

films where the Kagome plane is perpendicular to the plane of the film. There are some reports on the fabrication of near-stoichiometric Mn 3 Sn films, including (0001) Mn 3 Sn films on Ru seed layer ( 30 ), (0001) and

Mn 3 Sn films on MgO and Al 2 O 3 substrates ( 31 ), and polycrystalline films on Si/SiO 2 substrate ( 32 ). In this work, we used cosputtering of Mn and Sn targets and realized epitaxial growth of (0001) and

Mn 3+ x Sn 1− x films (see Materials and Methods).…”

Section: Resultsmentioning

confidence: 99%

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

et al. 2020

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Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date. Strongly correlated Weyl semimetals, particularly when magnetism is incorporated, offer a unique and fertile platform to explore emergent phenomena in novel topological matter and topological spintronics. The antiferromagnetic Weyl semimetal Mn3Sn exhibits many exotic physical properties such as a large spontaneous Hall effect and has recently attracted intense interest. In this work, we report synthesis of epitaxial Mn3+xSn1−x films with greatly extended compositional range in comparison with that of bulk samples. As Sn atoms are replaced by magnetic Mn atoms, the Kondo effect, which is a celebrated example of strong correlations, emerges, develops coherence, and induces a hybridization energy gap. The magnetic doping and gap opening lead to rich extraordinary properties, as exemplified by the prominent DC Hall effects and resonance-enhanced terahertz Faraday rotation.

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“…Thus, it is important to realize epitaxial films with two different orientations: (0001) films where the Kagome plane is in the plane of the film, and

Mn 3+ x Sn 1− x films (see Materials and Methods).…”

Section: Resultsmentioning

confidence: 99%

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

et al. 2020

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“…To examine the magnetic properties of Mn 3 Sn, we fabricate thin films [ 41–44 ] with various thickness directly onto a thermally oxidized Si substrate. [ 42,43 ] We find that our films of Mn 3 Sn shows the single phase of the hexagonal D0 19 structure in a wide range of Mn concentration (Mn 3.05 Sn 0.95 ‐Mn 3.18 Sn 0.82 ), which is consistent with the bulk cases (Note S1, Supporting Information).…”

Section: Magnetic Properties Of Mn3sn Filmsmentioning

confidence: 99%

Omnidirectional Control of Large Electrical Output in a Topological Antiferromagnet

Higo

Kondou

et al. 2021

Adv Funct Materials

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Control of magnetization direction is essential for the wide application of ferromagnets; it defines the signal size of memory and sensor. However, the magnetization itself causes a dilemma. While its size matters to obtain strong responses upon its reversal, the large magnetization concomitantly suppresses the range of its directional control because of the demagnetizing field. On the other hand, realization of the desired magnetic anisotropy requires careful engineering of crystalline and interfacial effects to overcome the demagnetization barrier. Thus, it would be ideal if one could find alternative magnets that carry no magnetization but strong responses. The discovery of a topological metallic state in the antiferromagnet Mn3Sn is significant; they host a large Berry curvature in momentum space, enabling the observation of disproportionately large transverse responses such as anomalous Hall and Nernst effects, the key functionalities for replacing ferromagnets in the magnetic devices. Here, the experimental realization of omnidirectional control of the large responses in an antiferromagnet is reported. In particular, it is demonstrated that the absence of shape anisotropy enables the omnidirectional control, and lifts the shape constraint in designing the magnetic devices. This work lays the technological foundation for developing simple‐structured high‐performance devices including multi‐level memory and heat flux sensor.

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“…We denote this as Mn3Sn, although we point out that the films grow with a slightly Mn-rich composition (and are thus not expected to show a first-order phase transition to a helical magnetic state below 275 K). [39]) are shown in Supplemental Table S1. The lattice mismatch between the SrTiO3 (111) substrates and the Ru buffer layer (and, in turn, the subsequent c-axis oriented Mn3Sn thin film) is less than that with the previously utilized Y:ZrO2 substrates.…”

Section: -Thin Film Growth and Structural Characterizationmentioning

confidence: 99%

“…In addition, such SQUID-VSM measurements reveal that the remnant uncompensated moment within the basal plane is enhanced compared with bulk crystals. This may be exacerbated by structural defects and chemical disorder acting to modify the balance of AF exchange, DMI interactions and magnetocrystalline anisotropy that governs the spontaneous canting of Mn spins [39].…”

mentioning

confidence: 99%

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn3Sn

et al. 2020

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Noncollinear antiferromagnets with a D019 (space group = 194, P63/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn3Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn3Sn films with both (0001) c-axis orientation and (404 ̅ 3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude σxy (µ0H = 0 T) = 21 Ω -1 cm -1 and coercive field µ0Hc = 1.3 T. We attribute the origin of this anomalous Hall effect to momentumspace Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn3Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.

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Noncollinear antiferromagnetic Mn3Sn films

Cited by 65 publications

References 39 publications

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Omnidirectional Control of Large Electrical Output in a Topological Antiferromagnet

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn3Sn

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Noncollinear antiferromagnetic Mn3Sn films

Cited by 65 publications

References 39 publications

Kondo physics in antiferromagnetic Weyl semimetal Mn 3+ x Sn 1− x films

Kondo physics in antiferromagnetic Weyl semimetal Mn 3+ x Sn 1− x films

Omnidirectional Control of Large Electrical Output in a Topological Antiferromagnet

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn3Sn

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Product

Resources

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Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films