Non-wettable/wettable coatings floating on liquid metal marbles for anti-combination, reversible conductivity transformation and magnetic motion in solution

Zhao, Jianguo; Bi, Xu; Dai, Han

doi:10.1039/d2ra04706c

Cited by 1 publication

(1 citation statement)

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“…For example, room temperature liquid metals (eGaIn and Galinstan) can wet reactive substrates such as copper, aluminum, silver, gold, etc., to form intermetallic compounds for extremely high adhesion properties. [86][87][88][89][90] These reactive wetting behaviors need the rupture of the oxide skin. As mentioned above, strong hydrochloric acid or alkaline bases are generally used to accomplish chemical wettings, and RT-GaLMs were selectively wetted patterned copper to create integrated circuits.…”

Section: Wettability and Adhesionmentioning

confidence: 99%

Room‐Temperature Liquid Metals for Flexible Electronic Devices

Lu,

Ni,

Jiang

et al. 2023

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Room‐temperature gallium‐based liquid metals (RT‐GaLMs) have garnered significant interest recently owing to their extraordinary combination of fluidity, conductivity, stretchability, self‐healing performance, and biocompatibility. They are ideal materials for the manufacture of flexible electronics. By changing the composition and oxidation of RT‐GaLMs, physicochemical characteristics of the liquid metal can be adjusted, especially the regulation of rheological, wetting, and adhesion properties. This review highlights the advancements in the liquid metals used in flexible electronics. Meanwhile related characteristics of RT‐GaLMs and underlying principles governing their processing and applications for flexible electronics are elucidated. Finally, the diverse applications of RT‐GaLMs in self‐healing circuits, flexible sensors, energy harvesting devices, and epidermal electronics, are explored. Additionally, the challenges hindering the progress of RT‐GaLMs are discussed, while proposing future research directions and potential applications in this emerging field. By presenting a concise and critical analysis, this paper contributes to the advancement of RT‐GaLMs as an advanced material applicable for the new generation of flexible electronics.

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