Non-volatile RF and mm-wave Switches Based on Monolayer hBN

Kim, Myungsoo; Pallecchi, Emiliano; Ge, Ruijing; Wu, Xiaohan; Avramovic, Vanessa; Okada, Étienne; Lee, Jack C.; Happy, H.; Akinwande, Deji

doi:10.1109/iedm19573.2019.8993470

Cited by 12 publications

(18 citation statements)

References 6 publications

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“…Regarding the small-signal response, Table I collects the intrinsic parameter values used here for describing the experimental data of 2D RF switches. Values of R ON and C OFF obtained here are in good agreement with the reported ones in [6] and for the smallest device in [7]. For the largest device in [7], R ON and C OFF have been obtained by considering a correct description of the RF power handling feature of the switch.…”

Section: Resultssupporting

confidence: 89%

“…The values of C ON obtained for the hBN devices are similar to the ones reported elsewhere for fabricated hBN-based MIMs, i.e., few pF [27], [28]. Furthermore, this capacitive effect at ON-state has not been observed in other 2D monolayer RF switches [4], [5] and hence it is suggested here to be associated to the charge storaged within the hBN layer during the filament-based resistive switching [15] rather than to the thickness of the monolayer as suggested elsewhere [6]. A further discussion of the intrinsic mechanism of the resisitive switching mechanism in hBN is out of the scope of this work, however, interested readers are directed to [15].…”

Section: Resultssupporting

confidence: 88%

“…6 4 . The modeling approach presented here differs from the previous reported model in [6], [7] since the former one considers C ON (for the ON-state) and R r (for both states) in the EC in contrast to the latter one where both of these elements are neglected.…”

Section: Resultsmentioning

confidence: 99%

“…The EC extrinsic network for all devices has been calibrated to the electromagnetic simulations of the OPEN-structure presented in [6]. The obtained values of C p and R a (cf.…”

Section: Resultsmentioning

confidence: 99%

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Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

Pacheco‐Sanchez

Jordán-García²,

Ramírez‐García³

et al. 2023

IEEE J. Electron Devices Soc.

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A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7.6 % with the approach presented here which overcomes the 42.5 % of difference obtained with a previous model with an incomplete intrinsic device description.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

“…The EC extrinsic network for all devices has been calibrated to the electromagnetic simulations of the OPEN-structure presented in [6]. The obtained values of C p and R a (cf.…”

Section: Resultsmentioning

confidence: 99%

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Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

Pacheco‐Sanchez

Jordán-García²,

Ramírez‐García³

et al. 2023

IEEE J. Electron Devices Soc.

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“…Besides voltage-sweep DC measurement, other characterization method like current sweeping and constant electric stress can be employed on the 2D-based memristors and illustrates more information in the resistive switching mechanisms [27,28]. Benefit from the ultra-thin nature of the active layer, a novel application, RF switch, is realized based on the atomristors with operating frequencies covering the RF, 5G, and mm-wave bands and exhibits superior performance compared to those of existing solid-state switches [29][30][31]. The results discussed in this chapter have been organized and reproduced with permissions based on several representative publications in this field.…”

Section: Introductionmentioning

confidence: 99%

Memristors Based on 2D Monolayer Materials

Wu¹,

Ge²,

Akinwande³

et al. 2021

Memristor - An Emerging Device for Post-Moore’s Computing and Applications

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2D materials have been widely used in various applications due to their remarkable and distinct electronic, optical, mechanical and thermal properties. Memristive effect has been found in several 2D systems. This chapter focuses on the memristors based on 2D materials, e. g. monolayer transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), as the active layer in vertical MIM (metal–insulator–metal) configuration. Resistive switching behavior under normal DC and pulse waveforms, and current-sweep and constant stress testing methods have been investigated. Unlike the filament model in conventional bulk oxide-based memristors, a new switching mechanism has been proposed with the assistance of metal ion diffusion, featuring conductive-point random access memory (CPRAM) characteristics. The use of 2D material devices in applications such as flexible non-volatile memory (NVM) and emerging zero-power radio frequency (RF) switch will be discussed.

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