2016
DOI: 10.1039/c6tc00083e
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Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate

Abstract: The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures.

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Cited by 28 publications
(23 citation statements)
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“…The modulus of PDMS can be regulated by the mass ratio of base monomer to curing agent, which is not suitable to making a single piece of PDMS film with domains of different modulus. Till now, the main strategy to realize different mechanical domains in a single film is embedding rigid materials, e.g., polyimide, polyethylene terephthalate, and photoresist, into the elastomers . However, the photolithography fabrication process is complicated, and the interface between different materials is hard to control in the current method.…”
mentioning
confidence: 99%
“…The modulus of PDMS can be regulated by the mass ratio of base monomer to curing agent, which is not suitable to making a single piece of PDMS film with domains of different modulus. Till now, the main strategy to realize different mechanical domains in a single film is embedding rigid materials, e.g., polyimide, polyethylene terephthalate, and photoresist, into the elastomers . However, the photolithography fabrication process is complicated, and the interface between different materials is hard to control in the current method.…”
mentioning
confidence: 99%
“…To date, very few publications have been reported on stretchable inorganic memory devices that are based on buckled structures and crosspoint arrays . Even fewer publications about stretchable OMDs have been reported . Chen fabricated a stretchable organic resistive memory with a buckled structure using a mechanically flexible and elastic graphene bottom electrode and stretchable P3BT:poly(methyl methacrylate) (PMMA) polymer semiconductor .…”
Section: Stretchable Organic Memory Devicesmentioning
confidence: 99%
“…Even after 500 stretching cycles from 0% to 30% strain, the stretchable OMD exhibited excellent electrical switching functions and memory effects. Another publication demonstrated non‐volatile organic ferroelectric memory transistors fabricated using rigid PI islands on an elastomer substrate, which exhibit no noticeable change in electrical performance up to 50% strain …”
Section: Stretchable Organic Memory Devicesmentioning
confidence: 99%
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“…As a result, both stretchable and nonstretchable functional devices can be located on the mechanically compatible parts of the hybrid structure, and combined as a complete unit with integrated functions. This method shows potential as a general solution for the construction of wearable electronic modules . Next, inspired by the ability of animals to memorize various gestures by detecting the movements of their body parts and storing the relevant information in their brains (Scheme a), we conceived of an integrated device to achieve a human motion memory system.…”
mentioning
confidence: 99%