2023
DOI: 10.1039/d3tc00227f
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Non-volatile memristor-based artificial synaptic behavior of redox-active organic composites

Abstract: The inexpensive, easy scalability and simple fabrication process make the organic molecule-based resistive memory a very promising technology for a new-generation data storage device. With data storage, resistive memory has...

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Cited by 9 publications
(7 citation statements)
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“…The PPF ratio with different pulse widths applied to the presynaptic neuron is shown in Figure b. The PPF decays with an increase of pulse interval and that has been fitted with an exponential curve of equation …”
Section: Resultsmentioning
confidence: 99%
“…The PPF ratio with different pulse widths applied to the presynaptic neuron is shown in Figure b. The PPF decays with an increase of pulse interval and that has been fitted with an exponential curve of equation …”
Section: Resultsmentioning
confidence: 99%
“…In addition, OFs have achieved remarkable achievements in the development of memristor materials and devices. This work focuses on the latest research progress of memristors based on OFs, including metal-organic frameworks (MOFs), covalent organic frameworks (COFs), and hydrogen-bonded organic frameworks (HOFs) (Figure 2), aiming at their potential for data storage, [52,53,19] artificial synapses, [54][55][56][57][58] and neuromorphic computing. [59][60][61][62][63] The challenges and prospects of further development of OFs-based memristors are also summarized.…”
Section: Introductionmentioning
confidence: 99%
“…In a 'memristor', a resistive switching memory element that can mimic the operation of a biological system, one metal electrode serves as a pre-neuron, another as a post-neuron, and the insulating layer acts as the synapse. 5,6 A wide range of materials have demonstrated the ability to exhibit resistive switching, including polymers, 7 organic materials, 8 transition metal dichalcogenides, 9 binary oxides, 10 and perovskites. 11 While oxides are the most extensively studied materials for resistive memories, their efficacy is impeded by the difficult fabrication, high-power consumption, and lack of precise control over filament formation that is associated with memristive functions, which compromises their performance.…”
Section: Introductionmentioning
confidence: 99%