Non-volatile memory with self-assembled ferrocene charge trapping layer

Zhu, Hao; Hacker, Christina A.; Pookpanratana, Sujitra J.; Richter, Curt A.; Yuan, Hui; Li, Haitao; Kirillov, Oleg A.; Ioannou, D.E.; Li, Qiliang

doi:10.1063/1.4817009

Cited by 21 publications

(45 citation statements)

References 20 publications

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“…2 School of Engineering, The University of Glasgow, Glasgow G12 8LT, UK. 3 The cluster cage can be reduced multiple times (grey area) and the two Se dopants at the POM cluster core can be oxidized (orange area). On the right, the cyclic voltammetry is obtained from microcrystals of 1a adhered to a glassy carbon electrode (diameter 1.5 mm) in 0.1 M tetrabutylammonium PF 6 acetonitrile solution at a scan rate of 200 mV s 21 and a scanning range V of 22.5 V to 1.8 V against a Ag/AgCl reference.…”

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confidence: 99%

“…Molecules have been proposed to replace MOS flash memory 1 , but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory 2 , there are a number of significant barriers to the realization of devices using conventional MOS technologies [3][4][5][6][7] . Here we show that core-shell polyoxometalate (POM) molecules 8 can act as candidate storage nodes for MOS flash memory.…”

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Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Busche

Vilà‐Nadal

Yan

et al. 2014

Nature

321

310

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Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2](4-) as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(v)2O6](2-) moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call 'write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

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confidence: 99%

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confidence: 99%

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Busche

Vilà‐Nadal

Yan

et al. 2014

Nature

321

310

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“…Redox molecules for this application hold promise and have been demonstrated with fullerenes, 9, 12, 10 ferrocenes, 8, 1113 and porphyrins. 8 The redox-active molecule diruthenium(II,III)tetrakis(2-anilinopyridinate) (now referred to as Ru 2 , see Figure 1c) offers accessibility to multiple redox states 14, 15 and can be potentially exploited for multilevel programmability.…”

Section: Introductionmentioning

confidence: 99%

Non-volatile memory devices with redox-active diruthenium molecular compound

Pookpanratana

Zhu

Bittle

et al. 2016

J. Phys.: Condens. Matter

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Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a “click” reaction and the monolayer structure is characterized by X-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The “click” reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

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“…In principal, a chemical synthesis in combination with a molecular selfassembly of the redox-active molecules can yield a regular distribution (spatially and energetically) of charge-storage centers (Pro 2009;Musumeci 2011). This allows us to scale the memory cell down to a few nanometres, as shown when using the organic redox-active molecules based on ferrocene and porphyrin (Zhu 2013;Paydavosi 2011). However, the organic molecules display low retention time due to the small associated redox potentials.…”

Section: Introductionmentioning

confidence: 99%

Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells

Georgiev

Asenov

2015

Numerical Methods and Applications

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In this work we present a multi-scale computational framework for evaluation of statistical variability in a molecular based non-volatile memory cell. As a test case we analyse a BULK flash cell with polyoxometalates (POM) inorganic molecules used as storage centres. We focuse our discussions on the methodology and development of our innovative and unique computational framework. The capability of the discussed multi-scale approach is demonstrated by establishing a link between the threshold voltage variability and current-voltage characteristics with various oxidation states of the POMs. The presented simulation framework and methodology can be applied not only to the POM based flash cell but they are also transferrable to the flash cells based on alternative molecules used as a storage media.Keywords (separated by '-') Multi-scale modelling -Molecular electronics -Multi-bit non-volatile memory -Polyoxometalates Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash CellsVihar P. Georgiev 1(B) and Asen Asenov 1,21 Device Modelling Group, University of Glasgow, Glasgow, UK vihar.georgiev@glasgow.ac.uk 2 GoldStandartSimulation Ltd., Glasgow, UK Abstract. In this work we present a multi-scale computational framework for evaluation of statistical variability in a molecular based nonvolatile memory cell. As a test case we analyse a BULK flash cell with polyoxometalates (POM) inorganic molecules used as storage centres. We focuse our discussions on the methodology and development of our innovative and unique computational framework. The capability of the discussed multi-scale approach is demonstrated by establishing a link between the threshold voltage variability and current-voltage characteristics with various oxidation states of the POMs. The presented simulation framework and methodology can be applied not only to the POM based flash cell but they are also transferrable to the flash cells based on alternative molecules used as a storage media.

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Non-volatile memory with self-assembled ferrocene charge trapping layer

Cited by 21 publications

References 20 publications

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Non-volatile memory devices with redox-active diruthenium molecular compound

Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells

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