Non uniform recombination in thin silicon-on-sapphire films

Cristoloveanu, S.; Chovet, A.; Kamarinos, G.

doi:10.1016/0038-1101(78)90242-3

Cited by 20 publications

(12 citation statements)

References 15 publications

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“…Les auteurs en concluent que seule une faible épaisseur du film contribue à la conduction. La couche de transition située à l'interface Si-A'203, qui doit être responsable de ce comportement pseudo-métallique, a une épaisseur estimée à 80 A [39], valeur en accord global avec celles obtenues par d'autres [38,40,[50][51][52]. 3.2.3 Magnétorésistance.…”

Section: Influence Des Contraintes Sur Les Coefficientsunclassified

“…3 . 20b), la durée de vie volumique -r, peut être considérée comme quasi uniforme et 3 points expérimentaux (+ B, -B et B = 0) suffisent pour déterminer les valeurs moyennes de Tv # 10 ns et des deux [37,52,91,93,94]).…”

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“…a) and experimental characteristics at low field (Fig, b : L = 18 um, W = 200 um, no =1016 cm-3, b = 7 um) and at high magnetic field (Fig. c : L = 10 pm, W = 50 pm, b = 0.65 um, no = 2 x 1016 cm -3).J vitesses de recombinaisons SI (Si-AI203) # 180 m/s et s2(Si-SiO2) # 15 m/s [37,52].…”

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confidence: 99%

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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

Cristoloveanu

Ghibaudo

Kamarinos

1984

Rev. Phys. Appl. (Paris)

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2014 Nous présentons une synthèse des travaux effectués en France sur la caractérisation des couches minces de silicium épitaxié sur des substrats de corindon (« saphir »). Une revue exhaustive des méthodes et des résultats concernant les propriétés physico-chimiques (défauts, impuretés, contamination, ...) et électriques (processus de transport, de recombinaison, de piégeage, ...) du SOS est présentée. Il apparaît que sur le plan physique les éléments clefs sont : (i) l'existence d'une région de transition d'épaisseur 100 à 150 A, située à l'interface Si-Al2O3, responsable pour l'essentiel des courants de fuite des transistors MOS/SOS, (ii) la non-uniformité des couches et leur caractère inhomogène lié à la présence d'un profil de défauts croissant vers l'interface Si-Al2O3 et qui s'accompagne d'une diminution notable de la mobilité et de la durée de vie des porteurs, (iii) les fortes contraintes d'interface qui provoquent une modification appréciable de la configuration énergétique et des paramètres de transport par rapport au Si massif, (iv) l'autodopage du film et (v) les fluctuations de potentiel. La cohérence des résultats émanant d'études indépendantes sur le matériau SOS non processé ou sur des dispositifs SOS est ensuite soulignée. Compte tenu de la pluralité des techniques et des conditions de mesure employées nous discutons également leurs pertinence, précision et limitations, ainsi que leur intérêt pour la caractérisation des couches minces issues d'autres technologies silicium sur isolant. Abstract. 2014 We present an overview of investigations conducted in France for the assessment of thin Si films epitaxied on sapphire substrates. Techniques and relevant data concerning physico-chemical properties (defects, impurities, contamination, ...) and electrical features (transport, recombination, trapping, ...) in SOS are reviewed extensively. The key physical parameters are : (i) existence of a transition layer 100-150 A thick, situated at the Si-Al2O3 interface, which is responsible for important leakage currents in MOS/SOS transistors, (ii) film nonuniformity connected with an increasing profile of defects towards the Si-Al2O3 interface and resulting in a noticeable degradation of carrier mobility and lifetime, (iii) lateral stress at the film-substrate interface, the effect of which is to modify both the band energy configuration and the transport parameters as compared to bulk Si, (iv) autodoping and (v) potentiel fluctuations. The consistency of different results derived from independent measurements performed on non-processed SOS films and on devices is emphasized. Finally, taking into account the great number of techniques and experimental conditions we also discuss their pertinence, precision or limitations as well as their interest for the characterization of other silicon on insulator technologies.

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Section: Influence Des Contraintes Sur Les Coefficientsunclassified

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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

Cristoloveanu

Ghibaudo

Kamarinos

1984

Rev. Phys. Appl. (Paris)

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“…Neglecting the longitudinal diffusion, the current equation (2.11) may be rewritten, where the coefficients at are given in [18].…”

Section: Current-voltage Charactepisticmentioning

confidence: 99%

“…The corresponding recombination velocities are s1,2 = R8,, ,/an( &b/2).Indeed, the analytical solution of the linear MC equation with z :, ST,,, shows a fairly good approach of the numerical exact distribution. This method allowed the MD effect analysis in SOS thin films where several distributions of recombination centres have been considered in correlation with non-linear SRH laws[18].…”

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Magnetic field and surface influences on double injection phenomena in semiconductors. I. The magnetodiode effect theory for the semiconductor and insulator regimes

Cristoloveanu¹

1981

Phys. Stat. Sol. (a)

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The general context of the magnetodiode effect is analysed according to an original theory. This effect is the superposition of the magnetoconcentration effect and of double injection phenomena: the electrons and holes injected by the end contacts are submitted to a magnetic deflection towards the same surface of the semiconductor, where the recombination process is responsible for the carrier density modulation; the resulting transverse carrier gradient directly influences the current magnitude. The behaviour of semiconductor plates provided with one or two injecting contacts is studied with the same twodimensional formalism. The successive steady‐state reg imesof the magnetodiode teffect are analysed for various parameters: external fields, bulk and surface recombination mechanisms, doping, and dimensions. It is shown that the classical current—voltage laws of the semiconductor and insulator regimes are subjected to considerable qualitative and quantitative modifications owing to both, the Lorentz forces and the recombination velocities. These parameters can be included in a carrier effective lifetime, the value of which is governed, for low inductions, by the longitudinal drift current and, for high inductions, by the transverse diffusion current. One of the main motivations of this work is to show that the p+nn+ magnetodiodes are ultrasensitive devices; hen the appropriate conditions allowing their optimum operating will be carefully defined.

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Magnetic field and surface influences on double injection phenomena in semiconductors: II. The magnetodiode effect theory for the diffusion regimes, magnetodiode experiments and applications

Cristoloveanu

1981

Phys. Stat. Sol. (a)

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The magnetodiode effect occurs when a carrier Lorentzian deflection is superimposed to the double injection phenomena. The regimes dominated by the carrier longitudinal diffusion are analysed with a general two‐dimensional theory, for wide ranges of injection rates and magnetic fields. It is found that the operating of p+nn+ and p+n magnetodiodes is similar. For low inductions, the current‐voltage characteristics strongly depend on the surface quality and induction direction, while, for high inductions, the magnetodiode effect is relatively masked by the magnetoresistance. In this part also experimental results are reported on Ge and integrated SOS magnetodiodes, which are found to be in very good agreement with the whole proposed theory. The measured sensitivities (300 VT−1 or 30 AT−1 in Ge and 10 VT−1 or 0.15 AT−1 in SOS) are largely exceeding those of conventional semiconductor sensors and allow a wide field of applications.

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Non uniform recombination in thin silicon-on-sapphire films

Cited by 20 publications

References 15 publications

Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

Magnetic field and surface influences on double injection phenomena in semiconductors. I. The magnetodiode effect theory for the semiconductor and insulator regimes

Magnetic field and surface influences on double injection phenomena in semiconductors: II. The magnetodiode effect theory for the diffusion regimes, magnetodiode experiments and applications

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