Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Agawane, G.L.; Shin, Seung Wook; Moholkar, A.V.; Gurav, K.V.; Yun, Jae Ho; Lee, Jun Young; Kim, Jihun

doi:10.1016/j.jallcom.2012.04.073

Cited by 60 publications

(49 citation statements)

References 37 publications

(69 reference statements)

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“…Thus they have become more popular in recent times. Various chemical techniques that has been used includes electrodeposition 9 , spray pyrolysis 10-11 , sol-gel 1 , spin coating 5 and chemical bath deposition [12][13][14][15] etc. The technique of CBD (also known as chemical solution deposition) is simple, inexpensive and can be adaptable to large area processing with low fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Sn Doped ZnS Thin Films Synthesized by CBD

Mukherjee

Mitra

2017

Mat. Res.

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Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Reitveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength.

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Section: Introductionmentioning

confidence: 99%

Characterization of Sn Doped ZnS Thin Films Synthesized by CBD

Mukherjee

Mitra

2017

Mat. Res.

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“…This results in a drop of the quantum efficiency in comparison to the theoretical efficiency [5]. In addition, the CBD-CdS in CIGS-based TFSCs creates a large amount of Cd containing waste during the deposition process [6]. Several major Cd poisoning incidents occurred in the early to mid-20th century all over the world [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the Cd based buffer layer should be replaced for two reasons; (i) further improvement in the short circuit current (I sc ), which can be achieved using a wide band gap material and (ii) environmentally friendly synthesis process. Among the various alternatives such as ZnO, ZnS, ZnSe, In 2 S 3 and InSe [9][10][11][12][13], the wide band gap materials like zinc sulphide (ZnS) with a band gap energy of 3.7 eV and zinc selenide (ZnSe) with band gap energy of 2.7 eV are the best candidates since they are economically priced and create low conduction band offsets [3,6,14]. Additionally these materials are most appropriate for their use in photoluminescent, electroluminescent devices and in short wavelength emitting diodes due to their wide band gap energy [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…The Na 3 -citrate forms strong citrate anions ((C 6 H 5 O 7 ) 3− ) in the basic bath [3,6], and the use of various molar concentrations of Na 3 -citrate cause the growth of thin films by different mechanisms [6]. In addition, the various physico-chemical properties like transmittance, thin film thickness, uniformity and the growth rate of the thin films are found to be principally dependent on the concentration of Na 3 -citrate [6,23,24]. Various metal ions like Zn 2+ , Fe 3+ , Ca 2+ , Ag + , and Mg 2+ can be complexed and their growth controlled in CBD by the use of three carboxylate groups [25].…”

Section: Introductionmentioning

confidence: 99%

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Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

Agawane

Shin

Suryawanshi

et al. 2014

Ceramics International

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“…Trisodium citrate can significantly improve the properties of ZnS films obtained through electrodeposition. 14 This paper reports preparation of ZnS thin films by electrodeposition on indium tin oxide (ITO)-coated glass substrates, with a focus on improving the quality of the films. This study is the first to use sulfurization to prepare ZnS thin films.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

Mkawi

Ibrahim

Ali

et al. 2015

Journal of Elec Materi

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Zinc sulfide (ZnS) thin films were prepared on indium tin oxide-coated glass by electrodeposition using aqueous zinc sulfate, thiourea, and ammonia solutions at 80°C. The effects of sulfurization at temperatures of 350°C, 400°C, 450°C, and 500°C on the morphological, structural, optical, and electrical properties of the ZnS thin films were investigated. X-ray diffraction analysis showed that the ZnS thin films exhibited cubic zincblende structure with preferred (111) orientation. The film crystallization improved with increasing annealing temperature. Field-emission scanning electron microscopy images showed that the film morphology became more compact and uniform with increasing annealing temperature. The percentage of sulfur in the ZnS thin films increased after sulfurization until a stoichiometric S/Zn ratio was achieved at 500°C. The annealed films showed good adhesion to the glass substrates, with moderate transmittance (85%) in the visible region. Based on absorption measurements, the direct bandgap increased from 3.71 eV to 3.79 eV with annealing temperature, which is attributed to the change of the buffer material composition and suitable crystal surface properties for effective p-n junction formation. The ZnS thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu 2 ZnSnS 4 /ZnS/ZnO/Al grid. The best solar cell efficiency was 1.86%.

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Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Cited by 60 publications

References 37 publications

Characterization of Sn Doped ZnS Thin Films Synthesized by CBD

Characterization of Sn Doped ZnS Thin Films Synthesized by CBD

Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

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