Non-switching to switching transferring mechanism investigation for Ag/SiO_x/p-Si structure with SiO_xdeposited by HWCVD

Abstract

We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I-V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I-V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

Epitaxial Engineering Strategy to Amplify Localized Surface Plasmon Resonance and Electrocatalytic Activity Enhancement in Layered Bismuth Selenide by Phosphorus Functionalization

“…Exfoliating the bulk layered material into single layer and few layers using different techniques including mechanical process opened new prospects to obtain two‐dimensional (2D) materials with large surface area to volume ratio than their bulk counterparts [2,3] . Furthermore, their significant features such as wide range of bandgap with tunability, optical absorption in longer wavelength, [4–7] localized magnetic moments, [4,8,9] and layered structures influenced anisotropic properties and their competence to accommodate host species thorough intercalation, make them preferable [10] . Layered transition‐metal chalcogenides are a class of materials which comprise of metals such as Mo, Co and chalcogens (X) such as S, Se and Te [11,12] .…”