Non‐stoichiometric GaAs – prospective material for compact THz emitters

Abstract

A non-stoichiometric (NS) GaAs layer by the means of terahertz (THz) emission spectroscopy is investigated. THz emission azimuthal dependencies and THz pulse amplitude dependence on the excitation angle were measured. Obtained results were explained by the existence of parallel to the sample surface components of THz radiating electric dipoles. The results were compared with those gained investigating GaAs nanowires. In addition, it was shown that a NS GaAs layer could be a very promising material for a compact bias-free THz emitter with good spectral characteristics.