Non‐self‐sustained electron beam RF‐generated plasma in application for functional surface pretreatment

Palov, Alexander P.; Proshina, O. V.; Рахимова, Т. В.; Rakhimov, A. T.; Воронина, Е. Н.

doi:10.1002/ppap.202100007

Cited by 9 publications

(10 citation statements)

References 68 publications

(73 reference statements)

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“…Ions with an energy of 10–20 eV damage the uppermost layer of the material with a thickness of about 1 nm. [ 33 ] The deposition of a metallic coating should reduce the damage. In this case, the damage is mainly determined by the effect of VUV radiation.…”

Section: Methodsmentioning

confidence: 99%

Damage to OSG low‐k films during IPVD deposition of the Ta barrier layer

Serov

Ryabinkin

Vishnevskiy

et al. 2022

Plasma Processes & Polymers

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Section: Methodsmentioning

confidence: 99%

Damage to OSG low‐k films during IPVD deposition of the Ta barrier layer

Serov

Ryabinkin

Vishnevskiy

et al. 2022

Plasma Processes & Polymers

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“…Modulation schemes to control the characteristic parameters of CCP mainly include dual-frequency (DF) or multi-frequency CCP [1,[5][6][7][8][9][10][11][12][13], hybrid CCP [14][15][16][17][18], external magnetic fields [19,20], electron beam (EB) injection CCP [21][22][23][24][25][26][27][28][29], and ion beam injection [30]. Recently, EB-driven approaches have gained considerable attention.…”

Section: Introductionmentioning

confidence: 99%

Numerical characterization of dual-frequency capacitively coupled plasmas modulated by electron beam injection

Zhou,

Wang,

et al. 2024

Phys. Scr.

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The modulated approach of electron beam (EB) injection can achieve favorable parameters for capacitive coupled plasmas(CCP). In this work, a one-dimensional particle-in-cell/Monte Carlo collision (PIC/MCC) model is used to simulate the stable dual-frequency (DF) CCP with EB injection. First, when the parameters of EB are kept constant at 0.01 A and 30 eV, the results demonstrate significant enhancements in electron density, self-bias voltage, and ion flux. Furthermore, the EEPF appears to have a transition from a typical bi-Maxwellian distribution to a Maxwellian distribution, and the dominant heating mode shifts from the α-mode to the α-γ-mode. Secondly, when the EB current and energy are all changed, the basic parameters of DF-CCP can be achieved by different modulations. Furthermore, we also discuss the transition of the electron heating mode as the current increases from 0.001 A to 1 A and the energy increases from 10 eV to 490 eV. In particular, we conduct a comparative study among different cases of EB injection. According to these results, the modulation capability of EB injection in DF-CCP is thoroughly investigated, which can greatly benefit atom-scale etching in practical applications.

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“…To further decrease ion energies, different alternative approaches have been proposed. One of the possible methods is the application of a nonselfsustained low-pressure rf plasma with additional ionization by an electron beam (EB) [18][19][20][21][22][23][24][25]. There are few results on the processing of materials in such plasma, for example, silicon [18] or graphene [26], which is easily damaged in conventional rf discharges.…”

Section: Introductionmentioning

confidence: 99%

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

Zotovich¹,

Lopaev²,

Bogdanova³

et al. 2022

J. Phys. D: Appl. Phys.

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Rf plasma with additional ionization by an electron beam (e-beam) is considered as a possible method for independent control of plasma density, mean electron and ion energies. In this study, spatial transition from e-beam to rf power controlled dual-frequency capacitively coupled plasma (DFCCP) was studied using the following movable diagnostics: Langmuir and hairpin probes, retarding field energy analyzer and optical emission spectroscopy. The beam (1.1-1.4 keV) is generated by a run-away electron beam module placed near the plasma chamber wall, while the plasma transition is caused by e-beam degradation with the distance from the e-beam module. The study was conducted in Ar at 200 mTorr and 400 mTorr gas pressures in 81 & 12 MHz DFCCP. When the e-beam is on, significant decrease of the mean electron energy is observed, from 6 eV in the rf plasma down to 0.2 – 0.8 eV in the e-beam plasma. The e-beam also changes the shape of electron energy probability function (EEPF): from Druyvesteyn-like in rf plasma it turns into Maxwellian-like. When both e-beam and rf power are applied the mean electron energy increase and electron density decrease with the distance from the e-beam module are observed due to the beam degradation. The ion energy distribution at the bottom electrode in rf plasma is peaked at 25 – 30 eV and shifted down to a few eV in e-beam plasma. As in conventional DFCCP, the ion energy distribution can be fine-tuned by application of a low-frequency rf bias. However, the use of an e-beam allows reducing the range of ion energies down to a few eV, which cannot be achieved in conventional rf discharges.

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Non‐self‐sustained electron beam RF‐generated plasma in application for functional surface pretreatment

Cited by 9 publications

References 68 publications

Damage to OSG low‐k films during IPVD deposition of the Ta barrier layer

Damage to OSG low‐k films during IPVD deposition of the Ta barrier layer

Numerical characterization of dual-frequency capacitively coupled plasmas modulated by electron beam injection

Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam

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