Non-reciprocal sub-micron waveguide Raman amplifiers, towards loss-less silicon photonics

Ahmadi, Mohammad; Jacques, Laurent; Shi, Wei; LaRochelle, Sophie

doi:10.1109/jstqe.2022.3195950

Cited by 8 publications

(2 citation statements)

References 25 publications

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“…V. GENERATION OF BROADBAND RAMAN-KERR COMB SPECTRAL BASED ON RAMAN SCATTERING Another important nonlinear effect in silicon is the Raman scattering [40]. Since silicon has a strong Raman gain coefficient which is around 10-20 cm/GW at 1550 nm and about 10 4 times higher than silica, it is widely used in Raman amplifiers and Raman lasers [41], [42], [43]. However, it can also be detrimental because it introduces additional wavelength components and increases the power requirement of the system.…”

Section: Effect Of Multi-photon Absorption On Comb Generationmentioning

confidence: 99%

Broadband Mid-Infrared Frequency Comb Generation in a Large-Cross-Section Silicon Microresonator

et al. 2023

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As a novel portable and robust broadband coherent light source, mid-infrared (MIR) Kerr microresonator-based frequency combs (microcombs) have prospective applications in the precision spectroscopy of molecules and biochemical sensing. The mature integrated silicon photonics platform is well suited for the MIR microcombs study because silicon has both large linear and nonlinear refractive index, but the transparency window of the platform is limited by the cladding material. Here, we numerically demonstrate the generation of a broadband MIR comb in a silicon microring resonator, harnessing the large-cross-section air-cladding waveguide to alleviate the absorption loss. The effects of higher order nonlinearities are also investigated, which show that the effect of five-photon absorption around the pump wavelength (4.78 µm) is negligible while an octave-spanning (3.5-8 µm) Raman-Kerr comb line can be obtained with the assistance of Raman effect and a quite pure Kerr frequency soliton comb can also be achieved at large detuning. The proposed structure can be compatible with the CMOS technology, thus can be a very promising solution to the MIR integrated photonics.

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Section: Effect Of Multi-photon Absorption On Comb Generationmentioning

confidence: 99%

Broadband Mid-Infrared Frequency Comb Generation in a Large-Cross-Section Silicon Microresonator

et al. 2023

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“…Compared to glass-based fibers, crystalline silicon waveguides are promising platforms for Raman processes due to their high damage threshold, strong Raman emission, and extended infrared transmission (1–8 μm). Significantly, Raman scattering in the telecom band was one of the first nonlinear processes demonstrated in a silicon waveguide 10 , and was closely followed by examples of amplification 9 , 11 – 13 and lasing 7 , 14 – 16 . However, despite this initial success, and Raman amplification being demonstrated in bulk silicon at 3.4 μm 17 , currently Raman amplification or wavelength shifting in silicon waveguides has been confined to wavelengths <2 μm, which is attributed to the relatively short device lengths and limited power handling of the on-chip components 7 .…”

Section: Introductionmentioning

confidence: 97%

Raman amplification at 2.2 μm in silicon core fibers with prospects for extended mid-infrared source generation

Huang,

Sun,

Saini

et al. 2023

Light Sci Appl

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Raman scattering provides a convenient mechanism to generate or amplify light at wavelengths where gain is not otherwise available. When combined with recent advancements in high-power fiber lasers that operate at wavelengths ~2 μm, great opportunities exist for Raman systems that extend operation further into the mid-infrared regime for applications such as gas sensing, spectroscopy, and biomedical analyses. Here, a thulium-doped fiber laser is used to demonstrate Raman emission and amplification from a highly nonlinear silicon core fiber (SCF) platform at wavelengths beyond 2 μm. The SCF has been tapered to obtain a micrometer-sized core diameter (~1.6 μm) over a length of 6 cm, with losses as low as 0.2 dB cm−1. A maximum on-off peak gain of 30.4 dB was obtained using 10 W of peak pump power at 1.99 μm, with simulations indicating that the gain could be increased to up to ~50 dB by extending the SCF length. Simulations also show that by exploiting the large Raman gain and extended mid-infrared transparency of the SCF, cascaded Raman processes could yield tunable systems with practical output powers across the 2–5 μm range.

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Toward in-fiber nonlinear silicon photonics

et al. 2023

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Silicon core fibers (SCFs) offer an exciting opportunity to harness the nonlinear functionality of the semiconductor material within the excellent waveguiding properties of optical fiber systems. Over the past two decades, these fibers have evolved from a research curiosity into established components for use across a wide range of photonic applications. This article provides a comprehensive overview of the evolution of the SCFs, with a focus on the development of the fabrication and post-processing procedures that have helped unlock the nonlinear optical potential of this new technology. As well as reviewing the timeline of advancements in nonlinear performance, a perspective will be provided on the current challenges and future opportunities for in-fiber nonlinear silicon systems.

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Non-reciprocal sub-micron waveguide Raman amplifiers, towards loss-less silicon photonics

Cited by 8 publications

References 25 publications

Broadband Mid-Infrared Frequency Comb Generation in a Large-Cross-Section Silicon Microresonator

Broadband Mid-Infrared Frequency Comb Generation in a Large-Cross-Section Silicon Microresonator

Raman amplification at 2.2 μm in silicon core fibers with prospects for extended mid-infrared source generation

Toward in-fiber nonlinear silicon photonics

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