Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

Beister, G.; Maege, J.; Erbert, G.; Tränkle, G.

doi:10.1016/s0038-1101(98)00178-6

Cited by 11 publications

(8 citation statements)

References 16 publications

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“…This current I nr is the focus of our interest for investigations of surface recombination. The extraction of I r from the I-V characteristic can be done by a so-called P-V-I analysis, based on an analysis of the powervoltage (P-V ) characteristic together with the P-I and I-V dependencies, as we have described it in [10].…”

Section: Extraction Of Radiative Current Component and Fitting Proced...mentioning

confidence: 99%

“…The next one is success in performing an iterative fitting procedure between simulated and measured P-V, P-I and I-V characteristics for the whole current range. This procedure is described in [10][11][12]. Modelling of P is based on the analytical solution of the current spreading problem, as outlined in the preceding subsection and in appendix A, and explained in appendix B.…”

Section: Extraction Of Radiative Current Component and Fitting Proced...mentioning

confidence: 99%

“…Some years ago, we presented a non-destructive method which enabled the separate determination of radiative, I r , and non-radiative, I nr , current components in laser diodes and which delivered information on the electronic facet stability via monitoring I nr [10]. To extract both current components, we used measurements of the emission power, P, in dependence on the voltage, V, well below the threshold and an iterative analysis based on earlier theoretical models [11] and [14] which will be described shortly in section 2.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Beister

Wenzel

2004

Semicond. Sci. Technol.

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We present novel investigations of surface and bulk contributions to the non-radiative recombination in InGaAs/AlGaAs (λ = 0.98 µm) RW laser diodes. These enable us to explain earlier experiments, in which we extracted the non-radiative and the radiative current components from the power-voltage-current (P-V-I ) characteristics measured well below the threshold. From these experiments, the non-radiative current component was identified as primarily related to surface recombination, which increased during facet degradation, and could be decreased by a sulfur treatment. In this paper, we use these experimental results to estimate the drop of the surface recombination velocity after the sulfur treatment and to give an upper bound for the bulk carrier lifetimes. This is done by simulations of the V-I characteristics assuming that all non-radiative recombination takes place either at the surface or in the bulk.

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Section: Extraction Of Radiative Current Component and Fitting Proced...mentioning

confidence: 99%

Section: Extraction Of Radiative Current Component and Fitting Proced...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Beister

Wenzel

2004

Semicond. Sci. Technol.

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“…The heterointerface between active zone and passive waveguide could be fill of defects responsible to photon absorption allowing to explain optical power losses [20,21,22]. This physical phenomenon is also responsible to heat accumulation in this interface explaining the drift of central wavelength and defect propagation in the structure increasing the drift of optical power [23].…”

Section: Failure Mechanisms Descriptionmentioning

confidence: 99%

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Deshayes

Verdier²,

Béchou³

et al. 2004

Reliability of Optical Fiber Components, Devices, Systems, and Networks II

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High performances and high reliability are two of the most important goals driving the penetration of optical transmission into telecommunication systems ranging from 880 nm to 1550 nm. Lifetime prediction defined as the time at which a parameter reaches its maximum acceptable shift still stays the main result in terms of reliability estimation for a technology. For optoelectronic emissive components, selection tests and life testing are specifically used for reliability evaluation according to Telcordia GR-468 CORE requirements. This approach is based on extrapolation of degradation laws, based on physics of failure and electrical or optical parameters, allowing both strong test time reduction and longterm reliability prediction. Unfortunately, in the case of mature technology, there is a growing complexity to calculate average lifetime and failure rates (FITs) using ageing tests in particular due to extremely low failure rates. For present laser diode technologies, time to failure tend to be 106 hours aged under typical conditions (P01O mW and T80°C). These ageing tests must be performed on more than 100 components aged during 10000 hours mixing different temperatures and drive current conditions conducting to acceleration factors above 300-400. These conditions are highcost, time consuming and cannot give a complete distribution of times to failure. A new approach consists in use statistic computations to extrapolate lifetime distribution and failure rates in operating conditions from physical parameters of experimental degradation laws. In this paper, Distributed Feedback single mode laser diodes (DFB-LD) used for 1550 nm telecommunication network working at 2.5 Gbitls transfert rate are studied. Electrical and optical parameters have been measured before and after ageing tests, performed at constant current, according to Telcordia GR-468 requirements.Cumulative failure rates and lifetime distributions are computed using statistic calculations and equations of drift mechanisms versus time fitted from experimental measurements. CONTEXT AND OBJECTIVESHigh-rate optical system performances are strongly related to micro-optoelectronic device parameters inserted into the transmitter and receiver blocks used for telecommunication applications. These blocks contain InP photonic and GaAs or InP electron devices. It has been already demonstrated that hybrid or monolithic integration used to assemble these modules (OEICs) suffer from various intrinsic and process dependent parasitic effects. In this case, reliability estimation is traditionally based on life-testing and a current approach is to apply Telcordia requirements (468GR) for optoelectronic applications [1]. But actual levels of reliability regarding long time to failure and very low failure rates lead to a dramatic increase difficulty for experimental evaluation. Moreover the complexities of system using infrared optics, used for align component and fiber, increase the difficulty to localize degraded zones responsible to optical power loss. Actual performances...

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“…The increase in recombination current is characterized by an increase in the slope p(T , t) of the log I (V ) curve in zone I and observed in Figure 8 at 300 K. Beister et al 40 have already reported this kind of signature in InGaAs/AlGaAs laser diodes emitting at 980 nm. The log I (V ) slope decreases and its variation p, detailed in Equation (15), after 600 h and 1200 h of ageing is presented in Figure 9, where p(T , t) corresponds to the slope of the log I (V ) curve measured after ageing, p(t = 0) represents the slope of the log I (V ) curve measured under initial conditions and T is the semiconductor temperature during measurement.…”

Section: Failure Mechanism Diagnostic Using Electrical Characterizationsmentioning

confidence: 68%

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

Cited by 11 publications

References 16 publications

Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

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