Abstract:Articles you may be interested inElectron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride Abstract. In this study the eikonal-scattering formalism is utilized to obtain information on the impact of charged dislocations on the Hall mobility of conduction electrons in wide-bandgap semiconductors.
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