Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Ahnood, Arman; Ghaffarzadeh, Khashayar; Nathan, Arokia; Servati, Peyman; Li, Flora; Esmaeili-Rad, Mohammad R.; Sazonov, Andrei

doi:10.1063/1.2999590

Cited by 19 publications

(12 citation statements)

References 8 publications

(3 reference statements)

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“…Overall, we notice a significant progress since the first device reported by LeComber et al [11] and the present values are amongst the highest found in the literature for a-Si:H [73][74][75][76][77][78][79] or nanostructured silicon TFTs [80][81][82]. The improvement observed on the TFTs performance is mainly related to two factors: lower growth rate used and the reduced hydrogen bombardment at the growing surface, which reduce defects.…”

Section: Thin Film Transistorssupporting

confidence: 62%

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Martins

Raniero

Pereira

et al. 2009

Philosophical Magazine

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Section: Thin Film Transistorssupporting

confidence: 62%

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Martins

Raniero

Pereira

et al. 2009

Philosophical Magazine

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“…To handle and to check whether strong non‐linearities are present, it is possible to take advantage of the operator $\left[{{{{\delta F\left(x \right)}}\over{{\delta x}}} - {{{F\left(x \right)}}\over{x}}} \right] $ , which removes linear terms 188. The experimentally measured quantity of interest here is the inverse of the output characteristic V DS ( I ) in the linear region.…”

Section: Contact Resistance Extraction Methodsmentioning

confidence: 99%

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

2012

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A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits.

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“…The µ SAT , V TH , and I ON /I OFF of ZTO TTFT(Al) were 12.7 cm 2 /Vs, 5.0 V, and >10 7 , respectively. Many research groups [18][19][20] have reported that the current retarding factors existed at the metal electrode-AOS active layer interface adversely affects the properties of TTFTs. A potential barrier, which restricts electron injection from the metal electrode into the active layer, can be formed at the metal-semiconductor interface.…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that a high contact resistance between the source/drain and the channel layer reduces the voltage drop across the channel, which aggravates the device performance of TFTs [18][19][20]. First, we metalized ZTO TTFTs with In to create source/drain electrodes [ZTO TTFT(In)].…”

Section: Resultsmentioning

confidence: 99%

Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

Ma¹

2014

Journal of Electrical Engineering and Technology

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-We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs).The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from AlO x , were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

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Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Cited by 19 publications

References 8 publications

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

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