Non-local impact ionization in silicon devices

Slotboom, J.W.; Streutker, G.; Dort, M.J. van; Woerlee, P.H.; Pruijmboom, A.; Gravesteijn, D.J.

doi:10.1109/iedm.1991.235484

Cited by 77 publications

(19 citation statements)

References 3 publications

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“…Here, the energy of electrons is derived from approximations to the energy-balance (EB) equations as (3) Here, is the average electron energy, is the effective temperature, is the electrostatic field, and is the energy relaxation length for electrons. empirically contains the dominant energy loss mechanisms for hot electrons, and has been found experimentally to be 65 nm [3]. In Fig.…”

Section: Methodsmentioning

confidence: 96%

“…This work extends very recent measurements [5] to diode widths as small as 30 nm. We also compare our measurements against a simple model of nonlocal avalanche generation, based on [2], [3], using an effective electric field. We find good agreement down to the thinnest diodes, and we use this model to make quantitative prediction for BV in bipolar transistors including the nonlocal effects.…”

Section: Introductionmentioning

confidence: 97%

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Impact Ionization in Thin Silicon Diodes

Agarwal

Goossens

Zieren

et al. 2004

IEEE Electron Device Lett.

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We study the breakdown behavior of thin, abrupt silicon pin-diodes, using a low-power optical technique which can directly measure the avalanche multiplication factors even in the presence of large tunneling currents. Our measurements agree with a simple model for nonlocal avalanche generation, and we use this model to extend the breakdown predictions to a broad class of doped diodes similar to those found in the base-collector region of bipolar devices. Based on this analysis, we make quantitative estimates for the BV CEO breakdown of modern Si and SiGe high-speed bipolar transistors.

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Section: Methodsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 97%

Impact Ionization in Thin Silicon Diodes

Agarwal

Goossens

Zieren

et al. 2004

IEEE Electron Device Lett.

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“…This non-local energy model has been successfully applied to study the impact ionization in advanced Si bipolar junction transistors (BJTs) [6,7,8], metal-oxide-Si field effect transistors (MOSFETs) [7,10] and InP HBTs with composite collectors [9]. Figure 2 shows the calculated local electric field and electron energy profiles within the depletion region of the base-collector junctions as shown in Fig.…”

Section: Modelmentioning

confidence: 99%

“…This non-equilibrium effect makes the impact ionization depend mostly on the carrier energy instead of the local electric field [6]. The nonequilibrium electron energy W ∆ can be calculated from the simplified energy balance equation with the following solution [6,7]:…”

Section: Modelmentioning

confidence: 99%

The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs

Lian

Xing

2008

Phys. Status Solidi (c)

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Breakdown voltages (VCBO) of AlGaAs/GaAs/GaAs and AlGaAs/GaAs/GaAs‐setback/GaN HBTs have been compared both theoretically and experimentally with respect to setback layer thicknesses and the doping type. VCBO was calculated using a non‐local energy model. The hard breakdown voltage was measured on as‐grown GaAs homojunctions and AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion. The calculation showed an increase of VCBO from ∼ 20 V to ∼ 325 V by replacing the GaAs collector with GaN, and VCBO ∼90 V was indeed measured. The smaller than predicted VCBO is attributed to the large leakage current currently present in the fused junctions. Insertion of a lightly doped GaAs setback layer has resulted in improved current gain of the fused HBTs, but it also degrades the breakdown characteristics. 20‐30 nm setback layers were found to maintain VCBO significantly higher than that of GaAs homojunctions and likely reasonable current gains. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The spike is only 50 nm wide and placed exactly at the collector-base junction, which results in a very thin high-field region. The integral amount of doping in the spike is kept sufficiently low ( 5 10 cm ) that electrons and holes crossing the highfield region do not gain enough energy to cause impact ionization [6], [7].…”

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confidence: 99%

Arsenic-spike epilayer technology applied to bipolar transistors

Noort

Nanver

Slotboom

2001

IEEE Trans. Electron Devices

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Abstract-For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing ceo . The increased collector-doping allows a 60% higher collector current prior to T fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.

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Non-local impact ionization in silicon devices

Cited by 77 publications

References 3 publications

Impact Ionization in Thin Silicon Diodes

Impact Ionization in Thin Silicon Diodes

The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs

Arsenic-spike epilayer technology applied to bipolar transistors

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