Non-local Auger effect in quantum dot devices

Wetzler, R.; Wacker, Andreas; Schöll, Eckehard

doi:10.1088/0268-1242/19/4/016

Cited by 8 publications

(5 citation statements)

References 10 publications

(9 reference statements)

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“…Since we are interested in the investigation of the laser regime, i.e., the WL carrier density is very high, the capture dynamics within the QD-WL structure is dominated by Coulomb scattering ͑nonlocal Auger recombination͒. 24,[28][29][30][31][32] The Coulomb scattering rates for electron and hole capture from WL into QD states and vice versa are calculated microscopically as a function of the WL electron and hole density w e and w h . The Coulomb contributions are taken into account up to the second-order Born approximation yielding 33,34 …”

Section: Nonlinear Scattering Ratesmentioning

confidence: 99%

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

et al. 2008

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We show that the dynamic response of electrically pumped semiconductor quantum dot lasers can be quantitatively understood by including the strongly nonlinear character of electron-electron scattering processes. The numerical simulations presented here combine a microscopic approach used for calculating the nonradiative scattering rates with a rate equation model used for modeling the complex dynamic turn-on behavior. Simulated turn-on delay, relaxation oscillation frequency, small-signal modulation response, and eye patterns of the quantum dot laser are presented and compared with experimental results at an emission wavelength of 1300 nm. The strong damping of the relaxation oscillations is attributed to an anomalous mechanism which involves Auger capture, including the mixed electron-hole process from the wetting layer ͑WL͒ into quantum dot states, and relies upon the pump current dependent ratio of WL electron and hole densities.

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Section: Nonlinear Scattering Ratesmentioning

confidence: 99%

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

et al. 2008

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“…These have to be captured into the bound QD states before the laser transition can take place. Since in the lasing regime, the WL carrier density is very high, the capture processes are dominated by Coulomb scattering (nonlocal Auger recombination) [23], [25], [26], which is also supported by the modeling of QD transport experiments [27], [28]. Our approach also includes the electron-phonon scattering for the cooling process in the WL, but neglects it for scattering into the QD states.…”

Section: Coulomb Scattering Ratesmentioning

confidence: 69%

Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

Bimberg¹,

Kuntz²,

Knorr³

et al. 2006

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest.

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Abstract-We present a theoretical simulation of the turn-on dynamics of InAs/GaAs quantum dot semiconductor lasers driven by electrical current pulses. Our approach goes beyond standard phenomenological rate equations. It contains microscopically calculated Coulomb scattering rates, which describe Auger transitions between quantum dots and the wetting layer. In agreement with the experimental results, we predict a strong damping of relaxation oscillations on a nanosecond time scale. We find a complex dependence of the Coulomb scattering rates on the wetting layer electron and hole densities, and we show their crucial importance for the understanding of the turn-on dynamics of quantum dot lasers.Index Terms-Coulomb scattering rates, quantum dot (QD) lasers, relaxation oscillations.

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“…Coulomb scattering (nonlocal Auger scattering) is the dominating scattering process for high carrier densities in the lasing regime [53]. Therefore, electron-phonon scattering is neglected for the carrier exchange between QW and QDs, but it is taken into account for the intraband transitions within the carrier reservoir.…”

Section: Quantum Dot Laser Modelmentioning

confidence: 99%

Manipulating coherence resonance in a quantum dot semiconductor laser via electrical pumping

Otto¹,

Lingnau²,

Schöll³

et al. 2014

Opt. Express

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Excitability and coherence resonance are studied in a semiconductor quantum dot laser under short optical self-feedback. For low pump levels, these are observed close to a homoclinic bifurcation, which is in correspondence with earlier observations in quantum well lasers. However, for high pump levels, we find excitability close to a boundary crisis of a chaotic attractor. We demonstrate that in contrast to the homoclinic bifurcation the crisis and thus the excitable regime is highly sensitive to the pump current. The excitability threshold increases with the pump current, which permits to adjust the sensitivity of the excitable unit to noise as well as to shift the optimal noise strength, at which maximum coherence is observed. The shift adds up to more than one order of magnitude, which strongly facilitates experimental realizations.

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Non-local Auger effect in quantum dot devices

Cited by 8 publications

References 10 publications

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

Manipulating coherence resonance in a quantum dot semiconductor laser via electrical pumping

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