Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

Abstract

Future bandwidth demand in optical communications requires all-optical devices based on optical non-linear behaviour of materials. InN, with a room temperature direct band-gap well below 0.82 eV (1.5 µm) is very attractive for these applications. In this work, we characterize the nonlinear optical response and recombination lifetime of the interband transition of InN layers grown on GaN-template and Si(111) by molecular beam epitaxy. Non-linear characterization shows a decrease of the third order susceptibility, 

Novel InN/InGaN multiple quantum well structures for slow‐light generation at telecommunication wavelengths

“…Δυ is calculated as the inverse of the lifetime of the photogenerated carriers, τ [11]. Taking a value of τ ~ 400 ps, which is two order of magnitude higher that the obtained one for InN bulk layer under non-linear regime [12], we have estimated a slow down factor of 80. Figure 6 shows the calculated S factor for the analysed sample.…”

Infrared photoluminescence of high In‐content InN/InGaN multiple‐quantum‐wells

“…InN has extended the operation wavelength of III‐nitrides to the near‐infrared (NIR) range (∼0.65 eV, 1.9 µm) 1 raising the possibility of new devices for application in photovoltaics, chemical sensing, high power/high speed electronics, high‐efficiency optoelectronics, solid‐state lighting, and terahertz emission and detection 2. InN is also a promising material for all‐optical signal processing applications in optical communication networks, which require new optical components for ultra fast pulse generation, dispersion and delay control (“slow light generation”) 3, switching, preamplification and wavelength conversion at 1.55 µm 4. This new generation of efficient devices should be characterized by high‐quality materials with low optical control power, high speed operation and improved working performance at room temperature.…”