Non-linear photoconductive response of room temperature InSb to high intensity 5.3 ?m radiation

Abstract

The photoconductive response of an ORP10 InSb detector has been found to be dependent on the cube root of illuminating intensity for high levels of irradiation at 5.3 I~m. The limiting power for a linear response (~1 W) is consistent with the predictions of a theory developed by Moss for a high mobility semiconductor.