2002
DOI: 10.1016/s0168-583x(02)01357-5
|View full text |Cite
|
Sign up to set email alerts
|

Non-linear effect of gold cluster ion induced damage in silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2003
2003
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 10 publications
0
1
0
Order By: Relevance
“…The photoacoustic launch pad was created by Au ion implantation in a 0.5-mm-thick quartz window at 60 keV to a dose of 6 ×10 16 per cm square (1216). The acceleration voltage was chosen so that Au ions are implanted within 50 nm below the surface (12).…”
Section: Resultsmentioning
confidence: 99%
“…The photoacoustic launch pad was created by Au ion implantation in a 0.5-mm-thick quartz window at 60 keV to a dose of 6 ×10 16 per cm square (1216). The acceleration voltage was chosen so that Au ions are implanted within 50 nm below the surface (12).…”
Section: Resultsmentioning
confidence: 99%